clot-buster
发表于 2025-3-21 17:53:33
书目名称Optimisation of ZnO Thin Films影响因子(影响力)<br> http://impactfactor.cn/2024/if/?ISSN=BK0703120<br><br> <br><br>书目名称Optimisation of ZnO Thin Films影响因子(影响力)学科排名<br> http://impactfactor.cn/2024/ifr/?ISSN=BK0703120<br><br> <br><br>书目名称Optimisation of ZnO Thin Films网络公开度<br> http://impactfactor.cn/2024/at/?ISSN=BK0703120<br><br> <br><br>书目名称Optimisation of ZnO Thin Films网络公开度学科排名<br> http://impactfactor.cn/2024/atr/?ISSN=BK0703120<br><br> <br><br>书目名称Optimisation of ZnO Thin Films被引频次<br> http://impactfactor.cn/2024/tc/?ISSN=BK0703120<br><br> <br><br>书目名称Optimisation of ZnO Thin Films被引频次学科排名<br> http://impactfactor.cn/2024/tcr/?ISSN=BK0703120<br><br> <br><br>书目名称Optimisation of ZnO Thin Films年度引用<br> http://impactfactor.cn/2024/ii/?ISSN=BK0703120<br><br> <br><br>书目名称Optimisation of ZnO Thin Films年度引用学科排名<br> http://impactfactor.cn/2024/iir/?ISSN=BK0703120<br><br> <br><br>书目名称Optimisation of ZnO Thin Films读者反馈<br> http://impactfactor.cn/2024/5y/?ISSN=BK0703120<br><br> <br><br>书目名称Optimisation of ZnO Thin Films读者反馈学科排名<br> http://impactfactor.cn/2024/5yr/?ISSN=BK0703120<br><br> <br><br>
CAB
发表于 2025-3-21 23:40:37
Summary and Future Works,The summary of the work and future work has been discussed in this chapter.
Invigorate
发表于 2025-3-22 04:25:42
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植物茂盛
发表于 2025-3-22 04:58:43
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NAV
发表于 2025-3-22 09:10:51
978-981-10-9257-2Springer Nature Singapore Pte Ltd. 2017
Suggestions
发表于 2025-3-22 13:31:45
Introduction,odes (LDs) and light-emitting diodes (LEDs) in the ultraviolet region because of its wide bandgap (3.437 eV at 2 K) and a large excitonic binding energy of 60 meV at room temperature. However, because of intrinsic defects such as oxygen vacancies and zinc interstitials, ZnO is intrinsically deposite
gnarled
发表于 2025-3-22 19:50:23
Optimisation of PLD Parameters,ntrinsic n-type nature of the deposited ZnO films. Hence, for successful conversion of its carriers from n-type to p-type, it is desirable that the deposited ZnO film has as low an electron concentration as possible. Moreover, for the fabrication of optoelectronic devices, the films should have very
observatory
发表于 2025-3-22 23:35:15
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G-spot
发表于 2025-3-23 04:21:03
Fabrication of Optoelectronics Devices,tion diode was fabricated by depositing p-type ZnO films over low resistivity n-Si substrates. The p-type ZnO was achieved by phosphorus as well as nitrogen implantation. The current–voltage characteristics of the fabricated p–n heterojunction diode showed a clear rectifying behaviour with a thresho
Watemelon
发表于 2025-3-23 07:36:18
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