aerial
发表于 2025-3-26 21:00:53
Quantum Wells and Superlattices of Diluted Magnetic Semiconductorsn the most thoroughly understood group of these materials, i.e., on II–VI compounds containing substitutional Mn. . Of those, Hg.Mn.Te and Hg.Mn.Se are narrow gap semiconductors, with the band structure analogous to that of Hg.Cd.Te, whereas Cd.Mn.Te and Zn.Mn.Se are examples II VI of wide-gap DMS.
landmark
发表于 2025-3-27 04:37:48
Energy Relaxation Phenomena in GaAs/GaAlAs Structuresoscillations, the far infrared emission and photoluminescence spectra. A quite general behavior of the electron heating ∆T = T. − T. as a function of the input power per electron P. is found: .. The corresponding energy relaxation times in the range of nsec are independent of the electron temperatur
慢慢啃
发表于 2025-3-27 09:10:49
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misanthrope
发表于 2025-3-27 09:43:25
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Working-Memory
发表于 2025-3-27 15:18:10
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syncope
发表于 2025-3-27 19:10:06
Cyclotron Resonance of Inversion Electrons on InSbn various materials in recent years.. The most interesting feature on narrow-gap semiconductors like InSb or Hg.Cd.Te is the coupling of valence and conduction band which results from their small gap energy. As a consequence the conduction band is strongly nonparabolic, i.e., the apparent mass stron
DRILL
发表于 2025-3-27 22:11:50
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大猩猩
发表于 2025-3-28 03:20:18
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exercise
发表于 2025-3-28 06:48:38
Strained Layer Superlattices of GaInAs-GaAses on a graded buffer layer matching this mean parameter. For the same reason, they constitute interesting buffer layers between two largely mismatched materials . Moreover, the modifications of the properties of the grown semiconductors by the built-in strains they experience make them potential
CEDE
发表于 2025-3-28 12:47:29
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