Suture
发表于 2025-3-21 19:52:35
书目名称On-Chip Electro-Static Discharge (ESD) Protection for Radio-Frequency Integrated Circuits影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0701314<br><br> <br><br>书目名称On-Chip Electro-Static Discharge (ESD) Protection for Radio-Frequency Integrated Circuits影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0701314<br><br> <br><br>书目名称On-Chip Electro-Static Discharge (ESD) Protection for Radio-Frequency Integrated Circuits网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0701314<br><br> <br><br>书目名称On-Chip Electro-Static Discharge (ESD) Protection for Radio-Frequency Integrated Circuits网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0701314<br><br> <br><br>书目名称On-Chip Electro-Static Discharge (ESD) Protection for Radio-Frequency Integrated Circuits被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0701314<br><br> <br><br>书目名称On-Chip Electro-Static Discharge (ESD) Protection for Radio-Frequency Integrated Circuits被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0701314<br><br> <br><br>书目名称On-Chip Electro-Static Discharge (ESD) Protection for Radio-Frequency Integrated Circuits年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0701314<br><br> <br><br>书目名称On-Chip Electro-Static Discharge (ESD) Protection for Radio-Frequency Integrated Circuits年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0701314<br><br> <br><br>书目名称On-Chip Electro-Static Discharge (ESD) Protection for Radio-Frequency Integrated Circuits读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0701314<br><br> <br><br>书目名称On-Chip Electro-Static Discharge (ESD) Protection for Radio-Frequency Integrated Circuits读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0701314<br><br> <br><br>
同步左右
发表于 2025-3-21 21:09:48
ts. Durch das Aufspüren eines vasoaktiven Materials in der Niere, das Renin-Angiotensin, wurde klar, daß es sich bei der Niere nicht nur um ein nützliches Ausscheidungsorgan für über-flüssige oder störende Chemikalien im Körper handelt, sondern um ein Organ, das auch vorrangig auf die Homöostase des
逢迎春日
发表于 2025-3-22 02:11:47
Basics in ESD Protection of Radio Frequency Integrated Circuits,y threat as it is present in all IC manufacturing processes from mainstream silicon-based complementary metal–oxide–semiconductor (CMOS) to the more exotic compound semiconductor processes such as gallium arsenide (GaAs) or gallium nitride (GaN).
preeclampsia
发表于 2025-3-22 04:37:33
On-Chip Protection Solution for Radio Frequency Integrated Circuits in Standard CMOS Process,ing sufficient ESD protection for RF and high-speed mixed signal ICs using mainstream CMOS processes imposes a major design and reliability challenge. Ideally ESD protection must be transparent to the protected core circuitry under normal operation conditions. In reality, interaction always exists b
Intuitive
发表于 2025-3-22 11:26:44
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反对
发表于 2025-3-22 13:34:53
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爆炸
发表于 2025-3-22 20:32:20
Conclusion, and other high-speed applications. The reliable daily usage of these RF electronics cannot be assured, however, unless the issue of electrostatic discharge (ESD) protection is properly addressed and implemented. As the semiconductor technology continues to scale down, ESD reliability concern is bec
最后一个
发表于 2025-3-23 00:36:40
On-Chip Protection Solution for Radio Frequency Integrated Circuits in Standard CMOS Process,ges in RF ESD design, as a low capacitance typically means a small device area and consequently a poor robustness of the ESD protection device. Other concerns in ESD design for RF ICs include the signal distortion due to the nonlinearity of the parasitic capacitance, the noise coupling as well as no
penance
发表于 2025-3-23 03:11:53
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灾祸
发表于 2025-3-23 08:55:59
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