Recovery
发表于 2025-3-21 19:06:26
书目名称Noise in Nanoscale Semiconductor Devices影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0666792<br><br> <br><br>书目名称Noise in Nanoscale Semiconductor Devices影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0666792<br><br> <br><br>书目名称Noise in Nanoscale Semiconductor Devices网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0666792<br><br> <br><br>书目名称Noise in Nanoscale Semiconductor Devices网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0666792<br><br> <br><br>书目名称Noise in Nanoscale Semiconductor Devices被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0666792<br><br> <br><br>书目名称Noise in Nanoscale Semiconductor Devices被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0666792<br><br> <br><br>书目名称Noise in Nanoscale Semiconductor Devices年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0666792<br><br> <br><br>书目名称Noise in Nanoscale Semiconductor Devices年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0666792<br><br> <br><br>书目名称Noise in Nanoscale Semiconductor Devices读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0666792<br><br> <br><br>书目名称Noise in Nanoscale Semiconductor Devices读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0666792<br><br> <br><br>
小母马
发表于 2025-3-21 20:27:00
Book 2020 aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a
BOLT
发表于 2025-3-22 03:49:32
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GUILT
发表于 2025-3-22 05:57:07
Book 2020 wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects..Describes the state-of-the-art, regarding noise in nanometer semiconductor devices;.Enables readers to design more reliable semiconductor devices;.Offers the most up-to-date information on point defects, based on physical microscopic models..
杀人
发表于 2025-3-22 12:02:43
Systematic Characterization of Random Telegraph Noise and Its Dependence with Magnetic Fields in MOstors and the influence of static low magnetic fields on the random telegraph noise signature at room temperature. Results show an unexpected trap oxide activation which is totally dependent on the specific device and the magnetic field applied.
FRET
发表于 2025-3-22 15:21:30
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调整校对
发表于 2025-3-22 18:12:05
,Low-Frequency Noise in III–V, Ge, and 2D Transistors,es with novel materials and architectures. In this chapter, low-frequency noise characteristics of MOSFETs with novel channel materials are presented and analyzed. The impact of device scaling and ballistic transport on low-frequency noise is discussed.
格子架
发表于 2025-3-22 21:44:52
Defect-Based Compact Modeling of Random Telegraph Noise,tage shift by adding a variable voltage source at the gate of the core device model. This combined compact model allows to incorporate all BTI and RTN related electrostatics and kinetics in standard EDA-tools as a black box without a custom simulation flow.
hematuria
发表于 2025-3-23 02:09:19
Oxide Trap-Induced RTS in MOSFETs,tion of passivated traps. Stressing the MOSFETs has also resulted in random activation and deactivation of oxide traps. This chapter focuses on the theoretical background of RTS in MOSFETs, sample setup for RTS measurements, data analyses, advantages, and limitations of using RTS to characterize defects.
专横
发表于 2025-3-23 08:44:25
,The Langevin–Boltzmann Equation for Noise Calculation,f balance equations of which the results for noise and transport are consistent with the Langevin–Boltzmann equation under homogeneous bulk conditions by introducing modified Langevin forces. Analytical and numerical solutions are given for simple problems to demonstrate the utility of the concepts.