arbiter
发表于 2025-3-23 12:37:53
Principles and Applications of ,-RTN in Nano-scaled MOSFET,e conventional soft breakdown and hard breakdown. And, a new one-time-programming (OTP) memory based on this dielectric-fuse breakdown has been demonstrated on a 28-nm high-k metal gate CMOS platform.
Influx
发表于 2025-3-23 16:17:25
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不透明性
发表于 2025-3-23 20:17:31
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Antarctic
发表于 2025-3-24 02:04:17
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桶去微染
发表于 2025-3-24 04:32:52
https://doi.org/10.1007/978-3-030-37500-3Random Telegraph Signals in Semiconductor Devices; Low-Frequency Noise in Advanced MOS Devices; Noise
Ordeal
发表于 2025-3-24 06:56:01
Tibor GrasserDescribes the state-of-the-art, regarding noise in nanometer semiconductor devices.Enables readers to design more reliable semiconductor devices.Offers the most up-to-date information on point defects
百灵鸟
发表于 2025-3-24 11:08:21
Origins of 1/, Noise in Electronic Materials and Devices: A Historical Perspective,devices is caused primarily by defects and impurities. The 1/. noise of semiconductor devices was considered to be a surface effect, ascribed by McWhorter to fluctuations in carrier number caused by surface charge trapping. After much controversy, the noise of metal films was shown to be due to mobi
有毛就脱毛
发表于 2025-3-24 17:50:35
Noise and Fluctuations in Fully Depleted Silicon-on-Insulator MOSFETs,ing of Fully Depleted Silicon-on-Insulator (FDSOI) MOSFETs, as well as the development of circuit noise simulation methods. Before doing so, we make a brief introduction (Sect. .) on the importance of LFN characterization and modeling, especially in sub-μm multi-interface devices such as the FDSOI M
defeatist
发表于 2025-3-24 22:06:55
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鲁莽
发表于 2025-3-25 00:01:43
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