Truman
发表于 2025-3-21 16:34:50
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Adulate
发表于 2025-3-21 21:24:42
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Neonatal
发表于 2025-3-22 04:08:40
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Clumsy
发表于 2025-3-22 05:48:58
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meretricious
发表于 2025-3-22 11:09:44
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crumble
发表于 2025-3-22 15:33:00
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完成才会征服
发表于 2025-3-22 17:03:49
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invert
发表于 2025-3-22 23:15:40
Brajesh Kumar Kaushik,Shivam Verma,Anant Aravind Kulkarni,Sanjay Prajapatiworking on surface plasmons in metal films.Contains importan.This significantly extended second edition addresses the important physical phenomenon of Surface Plasmon Resonance (SPR) or Surface Plasmon Polaritons (SPP) in thin metal films, a phenomenon which is exploited in the design of a large var
Mettle
发表于 2025-3-23 04:21:51
Next Generation 3-D Spin Transfer Torque Magneto-resistive Random Access Memories,ation density. These exclusive features of STT MRAMs are rapidly gaining attention of memory designers. They are strong contenders for futuristic embedded memory applications. However, further reduction in write power dissipation and cell size is essential to employ STT MRAMs for embedded applicatio
ensemble
发表于 2025-3-23 05:56:44
Spin Orbit Torque MRAM,power dissipation and unlimited endurance. In addition, it offers CMOS compatible architectures with high-speed read and write operations. During the initial phase of the development, researchers envisaged the greater potential of the STT based magnetic random access memory (MRAM) to become an alter