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发表于 2025-3-25 07:10:57
Brajesh Kumar‘Kaushik,Shivam Verma,Sanjay PrajapatDemonstrates nonvolatile computing architecture using spin transfer torque-magnetoresistive random access memory (STT-MRAMs) and comparison with conventional architecture.Includes emerging topics such
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Next Generation 3-D Spin Transfer Torque Magneto-resistive Random Access Memories,ation density. These exclusive features of STT MRAMs are rapidly gaining attention of memory designers. They are strong contenders for futuristic embedded memory applications. However, further reduction in write power dissipation and cell size is essential to employ STT MRAMs for embedded applications.
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Next Generation Spin Torque Memories978-981-10-2720-8Series ISSN 2191-530X Series E-ISSN 2191-5318
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