TEMPO
发表于 2025-3-21 19:14:53
书目名称Neutron-Transmutation-Doped Silicon影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0664693<br><br> <br><br>书目名称Neutron-Transmutation-Doped Silicon影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0664693<br><br> <br><br>书目名称Neutron-Transmutation-Doped Silicon网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0664693<br><br> <br><br>书目名称Neutron-Transmutation-Doped Silicon网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0664693<br><br> <br><br>书目名称Neutron-Transmutation-Doped Silicon被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0664693<br><br> <br><br>书目名称Neutron-Transmutation-Doped Silicon被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0664693<br><br> <br><br>书目名称Neutron-Transmutation-Doped Silicon年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0664693<br><br> <br><br>书目名称Neutron-Transmutation-Doped Silicon年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0664693<br><br> <br><br>书目名称Neutron-Transmutation-Doped Silicon读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0664693<br><br> <br><br>书目名称Neutron-Transmutation-Doped Silicon读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0664693<br><br> <br><br>
commune
发表于 2025-3-21 20:14:05
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inclusive
发表于 2025-3-22 00:35:18
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飓风
发表于 2025-3-22 05:44:16
Defect Production During Neutron Doping of Simeasurements using EPR, optical absorption, Raman scattering and DLTS which have been used to observe a number of defects which have been produced in Si by room temperature neutron irradiation. The numbers of displacements observed by these techniques will be compared to a simple Kinchin-Pease cascade model..
疼死我了
发表于 2025-3-22 11:39:53
Optical Studies of Lattice Damage in Neutron-Transmutation-Doped Siliconntervals from 150 to 900°C.. All samples were irradiated in a reactor in- core position with a thermal-to-fast (≥1 MeV) neutron ratio of ∿ 5, so that the lattice damage introduced by thermal neutron absorption and (n, γ) recoils was negligible compared to that introduced by fast neutron collisions with Si atoms.
AXIOM
发表于 2025-3-22 15:13:19
Large Scale Production of NTD Silicon in the United Statese played by the starting material. Analysis of the possible sources of inaccuracies is made..An outline of a zone refining process for producing only NTD product is compared to a conventional one with a discussion of advantages of the two. Trends in the manufacture and usage of NTD float zone silicon are discussed
全神贯注于
发表于 2025-3-22 19:25:28
Impurity Interactions with Structural Defects in Irradiated Siliconxes. It will be shown that irradiation and annealing procedures can lead to non-equilibrium defects involving these njnpurities. We shall also report on recent small angle neutron scattering SANS measurements which allow the sizes of clusters and the absolute numbers of defects involved to be estimated.
TAIN
发表于 2025-3-22 22:25:27
Factors Affecting Phosphorus Production Rate in NTD Siliconh irradiation and annealing, and incomplete annealing. It is important for both the silicon manufacturer and the reactor service engineer to understand these factors if the accuracy of doping inherent in the NTD process is to be realized.
Largess
发表于 2025-3-23 04:25:08
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矛盾心理
发表于 2025-3-23 05:33:21
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