MEAN
发表于 2025-3-23 12:05:03
http://reply.papertrans.cn/67/6610/660951/660951_11.png
RADE
发表于 2025-3-23 15:20:21
Bias-Induced Interfacial Redox Reaction in Oxide-Based Resistive Random-Access Memory Structure,hard X-ray photoelectron spectroscopy under bias operation. We demonstrated resistance switching for nonvolatile memory applications using a polycrystalline HfO. film with a Cu top electrode, and revealed the diffusion of Cu into the HfO. layer during the filament formation process. Resistive switch
亲密
发表于 2025-3-23 18:10:22
Switching Control of Oxide-Based Resistive Random-Access Memory by Valence State Control of Oxide,tions. As summarized in Chap. ., the density of oxygen vacancies is important in terms of controlling the conductive filament formation and switching of a nanoionic-type ReRAM structure. In this chapter, as an example of the control of oxygen vacancies and switching properties of the ReRAM structure
progestin
发表于 2025-3-24 00:47:31
http://reply.papertrans.cn/67/6610/660951/660951_14.png
爆炸
发表于 2025-3-24 04:11:46
NIMS Monographshttp://image.papertrans.cn/n/image/660951.jpg
条街道往前推
发表于 2025-3-24 09:14:29
http://reply.papertrans.cn/67/6610/660951/660951_16.png
collateral
发表于 2025-3-24 14:14:11
General Summary,In this book, the research topics concerns the oxide thin-film materials for the electronics device applications, which were performed by author’s grouped at NIMS.
边缘带来墨水
发表于 2025-3-24 17:37:48
Takahiro NagataDescribes the use of interface control to maximize the potential of materials in nanoscale phenomena.Introduces the combinatorial synthesis method for thin film growth used in the optimization of nume
Pseudoephedrine
发表于 2025-3-24 22:08:19
http://reply.papertrans.cn/67/6610/660951/660951_19.png
Vulnerable
发表于 2025-3-25 01:55:02
http://reply.papertrans.cn/67/6610/660951/660951_20.png