A精确的 发表于 2025-3-23 11:01:06
Robustness of Nanometer CMOS Designs: Signal Integrity, Variability and Reliability,than by the transistor itself. Most of the potential electrical problems, such as cross-talk, critical timing, substrate bounce and clock skew, etc. are related to the signal propagation and/or high (peak) currents through these metal wires.谆谆教诲 发表于 2025-3-23 13:56:14
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Manufacture of MOS Devices,Until the mid-1980s, the nMOS silicon-gate process was the most commonly used process for MOS LSI and VLSI circuits. However, nearly all modern VLSI and memory circuits are made in CMOS processes. CMOS circuits are explained in Chap. 4; the technology used for their manufacture is discussed in this chapter.SIT 发表于 2025-3-24 00:10:10
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Very Large Scale Integration (VLSI) and ASICs,The continuing development of IC technology during the last couple of decades has led to a considerable increase in the number of devices per unit chip area. The resulting feasible IC complexity currently allows the integration of a complete ., which may comprise hundreds of millions to a few billion transistors.连锁,连串 发表于 2025-3-24 11:04:26
Testing, Yield, Packaging, Debug and Failure Analysis,Although this is almost the final chapter in this book, it does not mean that the topics discussed here are less important than those of the previous chapters.impale 发表于 2025-3-24 15:18:56
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