Coolidge 发表于 2025-3-21 16:38:30

书目名称Multigate Transistors for High Frequency Applications影响因子(影响力)<br>        http://figure.impactfactor.cn/if/?ISSN=BK0640445<br><br>        <br><br>书目名称Multigate Transistors for High Frequency Applications影响因子(影响力)学科排名<br>        http://figure.impactfactor.cn/ifr/?ISSN=BK0640445<br><br>        <br><br>书目名称Multigate Transistors for High Frequency Applications网络公开度<br>        http://figure.impactfactor.cn/at/?ISSN=BK0640445<br><br>        <br><br>书目名称Multigate Transistors for High Frequency Applications网络公开度学科排名<br>        http://figure.impactfactor.cn/atr/?ISSN=BK0640445<br><br>        <br><br>书目名称Multigate Transistors for High Frequency Applications被引频次<br>        http://figure.impactfactor.cn/tc/?ISSN=BK0640445<br><br>        <br><br>书目名称Multigate Transistors for High Frequency Applications被引频次学科排名<br>        http://figure.impactfactor.cn/tcr/?ISSN=BK0640445<br><br>        <br><br>书目名称Multigate Transistors for High Frequency Applications年度引用<br>        http://figure.impactfactor.cn/ii/?ISSN=BK0640445<br><br>        <br><br>书目名称Multigate Transistors for High Frequency Applications年度引用学科排名<br>        http://figure.impactfactor.cn/iir/?ISSN=BK0640445<br><br>        <br><br>书目名称Multigate Transistors for High Frequency Applications读者反馈<br>        http://figure.impactfactor.cn/5y/?ISSN=BK0640445<br><br>        <br><br>书目名称Multigate Transistors for High Frequency Applications读者反馈学科排名<br>        http://figure.impactfactor.cn/5yr/?ISSN=BK0640445<br><br>        <br><br>

DEBT 发表于 2025-3-21 23:25:12

2731-4200 is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry..978-981-99-0159-3978-981-99-0157-9Series ISSN 2731-4200 Series E-ISSN 2731-4219

Decibel 发表于 2025-3-22 03:37:54

http://reply.papertrans.cn/65/6405/640445/640445_3.png

倒转 发表于 2025-3-22 06:45:13

Book 2023equency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry..

神化怪物 发表于 2025-3-22 12:17:45

http://reply.papertrans.cn/65/6405/640445/640445_5.png

解冻 发表于 2025-3-22 15:57:26

http://reply.papertrans.cn/65/6405/640445/640445_6.png

笨拙的你 发表于 2025-3-22 18:27:39

Springer Tracts in Electrical and Electronics Engineeringhttp://image.papertrans.cn/n/image/640445.jpg

epicardium 发表于 2025-3-23 01:17:08

https://doi.org/10.1007/978-981-99-0157-9Multigate Transistor; RF Stability; High Frequency; Small Signal Parameter; Cut-off Frequency; Maximum Os

考古学 发表于 2025-3-23 02:14:00

K. Sivasankaran,Partha Sharathi MallickDiscusses RF Stability for Multigate Transistors.Highlights pedagogical features of RF modeling, design optimization of multigate transistors.Illustrations/diagrams and tables of results are included

杀菌剂 发表于 2025-3-23 08:41:44

Multigate Transistors for High Frequency Applications
页: [1] 2 3 4
查看完整版本: Titlebook: Multigate Transistors for High Frequency Applications; K. Sivasankaran,Partha Sharathi Mallick Book 2023 The Editor(s) (if applicable) and