Dri727
发表于 2025-3-30 09:50:20
http://reply.papertrans.cn/64/6335/633445/633445_51.png
MAL
发表于 2025-3-30 14:50:33
Composite Substrates for GaN Growthansferred onto polycrystalline SiC. Those composite substrates can be prepared for 4” size and over as well. GaN layers are grown onto the above substrates in order to demonstrate that they can be used for the fabrication of GaN high electron mobility transistor (HEMT) devices. The epitaxial nitride
Alveoli
发表于 2025-3-30 17:26:31
http://reply.papertrans.cn/64/6335/633445/633445_53.png
错误
发表于 2025-3-30 23:30:33
An Initial Exploration of GaN Grown on a Ge-(111) Substratessisted molecular beam epitaxy (PAMBE) without any intermediate buffer layers. One defect, initially observed with optical microscopy, has a triangular shape in plan-view imaging and is essentially a faceted void in the Ge extending from the interface into the substrate. Another type of defect is th
背书
发表于 2025-3-31 03:43:35
http://reply.papertrans.cn/64/6335/633445/633445_55.png
指令
发表于 2025-3-31 05:14:43
http://reply.papertrans.cn/64/6335/633445/633445_56.png
考古学
发表于 2025-3-31 12:35:10
http://reply.papertrans.cn/64/6335/633445/633445_57.png
责问
发表于 2025-3-31 16:30:34
http://reply.papertrans.cn/64/6335/633445/633445_58.png
Blood-Clot
发表于 2025-3-31 18:07:10
http://reply.papertrans.cn/64/6335/633445/633445_59.png
广口瓶
发表于 2025-3-31 22:41:13
http://image.papertrans.cn/m/image/633445.jpg