gloomy 发表于 2025-3-21 16:38:38

书目名称Microscopy of Semiconducting Materials影响因子(影响力)<br>        http://impactfactor.cn/if/?ISSN=BK0633444<br><br>        <br><br>书目名称Microscopy of Semiconducting Materials影响因子(影响力)学科排名<br>        http://impactfactor.cn/ifr/?ISSN=BK0633444<br><br>        <br><br>书目名称Microscopy of Semiconducting Materials网络公开度<br>        http://impactfactor.cn/at/?ISSN=BK0633444<br><br>        <br><br>书目名称Microscopy of Semiconducting Materials网络公开度学科排名<br>        http://impactfactor.cn/atr/?ISSN=BK0633444<br><br>        <br><br>书目名称Microscopy of Semiconducting Materials被引频次<br>        http://impactfactor.cn/tc/?ISSN=BK0633444<br><br>        <br><br>书目名称Microscopy of Semiconducting Materials被引频次学科排名<br>        http://impactfactor.cn/tcr/?ISSN=BK0633444<br><br>        <br><br>书目名称Microscopy of Semiconducting Materials年度引用<br>        http://impactfactor.cn/ii/?ISSN=BK0633444<br><br>        <br><br>书目名称Microscopy of Semiconducting Materials年度引用学科排名<br>        http://impactfactor.cn/iir/?ISSN=BK0633444<br><br>        <br><br>书目名称Microscopy of Semiconducting Materials读者反馈<br>        http://impactfactor.cn/5y/?ISSN=BK0633444<br><br>        <br><br>书目名称Microscopy of Semiconducting Materials读者反馈学科排名<br>        http://impactfactor.cn/5yr/?ISSN=BK0633444<br><br>        <br><br>

STALL 发表于 2025-3-21 22:04:57

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愉快么 发表于 2025-3-22 02:19:45

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祖传财产 发表于 2025-3-22 07:53:59

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恭维 发表于 2025-3-22 11:57:46

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致命 发表于 2025-3-22 16:29:25

Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changesity and the wetting layer thickness with growth time have been studied. The nanostructure density was found to saturate with increasing growth time, but unexpectedly, the nanostructure size was also seen to stabilise. We have used high-resolution transmission electron microscopy (HRTEM) to further i

PRE 发表于 2025-3-22 18:23:26

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cultivated 发表于 2025-3-22 21:42:38

In GaN-GaN quantum wells: their luminescent and nano-structural propertiesectra of single quantum wells show an excitonic emission mechanism that is localised on a length scale of 12–30Å. Using high-resolution STEM high-angle annular dark field imaging we have looked for nano-structural features in high-indium content multiple and single quantum wells. We find the existen

ARC 发表于 2025-3-23 03:06:26

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心痛 发表于 2025-3-23 08:16:02

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查看完整版本: Titlebook: Microscopy of Semiconducting Materials; Proceedings of the 1 A. G. Cullis,J. L. Hutchison Conference proceedings 20051st edition Springer-V