矛盾心理
发表于 2025-3-28 15:27:03
Structural properties of InN thin films grown with variable growth conditions on GaN/Al2O3 by plasmaieved by using high In/N flux ratios. Compact films generally exhibit higher in-plane lattice constant values than columnar ones and, consequently, higher densities of InN/GaN interfacial misfit dislocations.
先行
发表于 2025-3-28 18:45:15
Characterization and structuring of nitride-based heterostructures for vertical-cavity surface-emitth interface roughness whereas smooth layers without cracks could be found for the structure containing the AlN/In.Ga.N superlattice. The In.Ga.N layers were homogeneous, although indications for In-segregation could be observed. Mesas of these structures were prepared by the focused ion-beam technique.
exceed
发表于 2025-3-29 00:12:16
Characterization of defects in ZnS and GaNn significant numbers of planar defects. Commercial samples of GaN also contain large numbers of planar defects which are not well understood. The present study will discuss similar defects in the two materials.
TERRA
发表于 2025-3-29 05:05:09
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创新
发表于 2025-3-29 08:26:53
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Flustered
发表于 2025-3-29 11:27:13
the Institute of Physics, London and the Materials Research Society, USA. The 14.th. conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy.
时间等
发表于 2025-3-29 18:24:16
probe microscopy and also X-ray topography and diffraction. Developments in materials science and technology covering the complete range of elemental and compound semiconductors are described in this volume..978-3-642-06870-6978-3-540-31915-3
中止
发表于 2025-3-29 22:38:43
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容易做
发表于 2025-3-30 03:28:04
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Hectic
发表于 2025-3-30 06:00:30
Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changesut unexpectedly, the nanostructure size was also seen to stabilise. We have used high-resolution transmission electron microscopy (HRTEM) to further investigate the wetting layer growth and quantify changes with InGaN growth time.