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978-0-7923-0154-7Kluwer Academic Publishers 1989Liability 发表于 2025-3-22 04:13:04
Microelectronic Materials and Processes978-94-009-0917-5Series ISSN 0168-132Xsubacute 发表于 2025-3-22 08:02:09
NATO Science Series E:http://image.papertrans.cn/m/image/633203.jpgExplicate 发表于 2025-3-22 11:28:05
http://reply.papertrans.cn/64/6333/633203/633203_5.pngHERE 发表于 2025-3-22 15:03:45
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Silicon Oxidation,Today’s VLSI technology is to a large extent based on the excellent properties of thermally grown silicon dioxide layers. SiO. is used as gate dielectric in MOS devices, as implantation or doping mask, and for device isolation purposes.Eructation 发表于 2025-3-22 22:40:53
http://reply.papertrans.cn/64/6333/633203/633203_8.pngRecessive 发表于 2025-3-23 01:49:08
Diffusion in Semiconductors,Atomic diffusion processes in semiconductors play an important role in the fabrication of electronic devices in various areas. These areas include:enmesh 发表于 2025-3-23 06:04:53
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