gruelling
发表于 2025-3-26 23:11:30
Design and Performance Investigation of Dual-Gate ZnO Nanostructured Thin-Film Transistornal top-gate (TG) and bottom-gate (BG) ZnO TFTs. TFTs using dual-gate (DG) technology have two conduction channels at each interface (top and bottom) to enhance gate electric fields and effective channel conduction. The capacitive coupling between the top- and bottom-gate dielectrics in the DG ZnO T
Anticonvulsants
发表于 2025-3-27 03:05:45
Investigation of Normally-Off β-Ga2O3 Power MOSFET Using Ferroelectric Gatete (Fe-G). The enhancement-mode (E-Mode) operations are achieved by depleting the charge carriers from the channel using the gate charge trapped in the ferroelectric material at the ferroelectric–dielectric (Fe-De) interface. The enhancement-mode (E-mode) operation has a negligible degradation in sa
债务
发表于 2025-3-27 08:47:17
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diskitis
发表于 2025-3-27 10:59:24
Implementation of Vending Machine to Offer and Recycle Productsste products to make the world more eco-friendly. This project is intended to design a vending machine that offers products to customers and accepts specific waste products from customers to recycle. This vending machine offers products such as newspaper, journal and magazine and accepts the old or
锡箔纸
发表于 2025-3-27 16:19:04
Using the Cell-Based Design, Employ a Contrivance Analysis on a Quadrature Phase Shift Keying Modulaired to transmit information more securely from one to another. As technology advances, the cost of an IC decreases steadily, and as a result, chips are constructed using systems like SOC. By using a cell-based approach similar to IP core cell-based design, a QPSK modulator which includes a digital
撕裂皮肉
发表于 2025-3-27 18:34:19
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Heart-Attack
发表于 2025-3-27 23:17:16
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幼稚
发表于 2025-3-28 02:57:19
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炼油厂
发表于 2025-3-28 07:36:39
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Cleave
发表于 2025-3-28 12:18:09
Trupti Ranjan Lenka,Samar K. Saha,Lan FuIs useful for academic researchers and practitioners in the industry.Includes the peer-reviewed proceedings of MNDCS-2023.Presents state-of-the-art research and developments in micro and nanoelectroni