奖牌
发表于 2025-3-25 05:46:59
Design and Realization of Logic Gates Using Double Gate Tunnel FET, despite TFETs having a low ON-state current and slower speed than CMOS. In the proposed work, silicon-based DG-tunnel FETs for Boolean operations (AND, OR, NAND, and NOR gates) are explored. Each gate is individually biased for this purpose. Silicon body thickness and overlapping of gate-source ar
减震
发表于 2025-3-25 07:59:57
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爱了吗
发表于 2025-3-25 11:45:17
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演讲
发表于 2025-3-25 18:18:36
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GEST
发表于 2025-3-25 21:33:03
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florid
发表于 2025-3-26 02:05:52
Investigation of the Temperature Impact on the Performance Characteristics of the Field-Plated Recescal characteristics of the proposed HEMT is investigated by using the thermal models of ATLAS TCAD simulations. The impact of temperature on the transport properties is studied. Influence of the substrate thickness with temperature changes on drain characteristics are also discussed. A field-plate a
expeditious
发表于 2025-3-26 06:30:30
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离开就切除
发表于 2025-3-26 10:09:59
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Nuance
发表于 2025-3-26 13:07:26
Fabrication and Characterization of E-Beam Deposited Copper Oxide Thin Film on FTO and Silicon SubstSi substrate by simple E-beam evaporation techniques. To study the effect of annealing on the structure, morphology and optical properties of copper oxide-TF, the fabricated sample was annealed at 400 and 500 °C. The as-deposited copper oxide-TF/FTO sample shows the cuprous oxide (Cu.O) phase at ~ 4
任命
发表于 2025-3-26 20:29:21
Current Status and Future Perspectives of Tunnel Field Effect Transistors for Low Power Switching Aphe power dissipation in conventional field effect transistors is constrained by the Boltzmann’s Tyranny, i.e., at least 60 mV gate voltage is required to switch the transistor by one decade of drain current at 300 K. Tunnel field-effect transistors (TFET) is an exceptional candidate as energy effici