把…比做 发表于 2025-3-28 14:54:24

http://reply.papertrans.cn/64/6315/631424/631424_41.png

Electrolysis 发表于 2025-3-28 20:57:14

Source of Metals in Si and Ge Crystal Growth and Processing,s step, requiring regular metal contamination monitoring. While the lowering of the thermal budget has reduced the occurrence of contamination, fast diffusing metals can still penetrate the semiconductor material. Finally, the use of metal layers and its impact on metal contamination is highlighted in the last section of this chapter.

Gleason-score 发表于 2025-3-28 23:27:13

Impact of Metals on Silicon Devices and Circuits,be obtained. In forward operation, excess recombination mediated by metal-related deep levels gives rise to an ideality factor between 1 and 2. A third part considers the impact on transistors and circuits, including CCDs and CMOS Imager Sensors (CIS).

思想流动 发表于 2025-3-29 04:25:15

http://reply.papertrans.cn/64/6315/631424/631424_44.png

工作 发表于 2025-3-29 09:40:35

http://reply.papertrans.cn/64/6315/631424/631424_45.png

stress-response 发表于 2025-3-29 13:55:13

http://reply.papertrans.cn/64/6315/631424/631424_46.png
页: 1 2 3 4 [5]
查看完整版本: Titlebook: Metal Impurities in Silicon- and Germanium-Based Technologies; Origin, Characteriza Cor Claeys,Eddy Simoen Book 2018 Springer International