pus840
发表于 2025-3-26 21:09:41
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谦卑
发表于 2025-3-27 02:42:54
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indenture
发表于 2025-3-27 05:48:56
Modeling of Metal Properties in Si, Si,Ge, and Ge,are important from a viewpoint of gettering and passivation of metal contaminants. In a final section, the formation of metal pairs and small clusters will be investigated. In addition, the interactions of metal atoms with radiation and extended defects are discussed. An approach for the understandi
不法行为
发表于 2025-3-27 10:35:24
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Adenoma
发表于 2025-3-27 14:30:25
Metal Impurities in Silicon- and Germanium-Based Technologies978-3-319-93925-4Series ISSN 0933-033X Series E-ISSN 2196-2812
清楚说话
发表于 2025-3-27 20:09:05
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根除
发表于 2025-3-28 01:44:28
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Accommodation
发表于 2025-3-28 04:16:02
https://doi.org/10.1007/978-3-319-93925-4Metal Gettering; Metal Precipitation and Segregation; Defects and Device Performance; Defect Engineerin
Cosmopolitan
发表于 2025-3-28 06:49:41
Book 2018for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering..
phlegm
发表于 2025-3-28 11:00:10
Book 2018etals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed.. .The book offers a valuable reference guide