谴责
发表于 2025-3-21 19:35:24
书目名称Memristor Technology: Synthesis and Modeling for Sensing and Security Applications影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0630543<br><br> <br><br>书目名称Memristor Technology: Synthesis and Modeling for Sensing and Security Applications影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0630543<br><br> <br><br>书目名称Memristor Technology: Synthesis and Modeling for Sensing and Security Applications网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0630543<br><br> <br><br>书目名称Memristor Technology: Synthesis and Modeling for Sensing and Security Applications网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0630543<br><br> <br><br>书目名称Memristor Technology: Synthesis and Modeling for Sensing and Security Applications被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0630543<br><br> <br><br>书目名称Memristor Technology: Synthesis and Modeling for Sensing and Security Applications被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0630543<br><br> <br><br>书目名称Memristor Technology: Synthesis and Modeling for Sensing and Security Applications年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0630543<br><br> <br><br>书目名称Memristor Technology: Synthesis and Modeling for Sensing and Security Applications年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0630543<br><br> <br><br>书目名称Memristor Technology: Synthesis and Modeling for Sensing and Security Applications读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0630543<br><br> <br><br>书目名称Memristor Technology: Synthesis and Modeling for Sensing and Security Applications读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0630543<br><br> <br><br>
N斯巴达人
发表于 2025-3-21 22:05:25
Heba Abunahla,Baker MohammadDiscusses a detailed, physics-based mathematical model, which can guide the design and fabrication process of memristive devices.Describes detailed fabrication process steps for real memristor devices
myocardium
发表于 2025-3-22 04:04:13
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DAMP
发表于 2025-3-22 05:03:11
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飞来飞去真休
发表于 2025-3-22 10:43:09
Memristor Technology: Synthesis and Modeling for Sensing and Security Applications978-3-319-65699-1Series ISSN 1872-082X Series E-ISSN 2197-1854
MOTTO
发表于 2025-3-22 15:50:04
,Synthesis and Characterization of Micro-Thick TiO2 and HfO2 Memristors, of the micro-thick HfO. devices provided here is to investigate the switchability of the novel system and to study the effect of changing key parameters such as (i) the electrode material and (ii) the drying temperature during solgel processing on the resistive switching behavior. The results prese
肌肉
发表于 2025-3-22 20:21:23
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Grievance
发表于 2025-3-22 23:23:24
Synthesis and Characterization of Wire-Based NbO Memristive Junctions,e voltage flux applied through the ~400 nm thick NbO junction is shown to have a linear relationship to the charge produced within the device. The conductance value . is a function of the total flux history applied. This has implications in emerging neuromorphic semiconductor hardware.
只有
发表于 2025-3-23 01:44:42
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Repetitions
发表于 2025-3-23 08:37:23
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