一加就喷出
发表于 2025-3-27 00:52:01
Floating-dot Memory Transistors on SOI Substrateuels the demand for these devices. The presented floating-dot memory concept discloses a related and CMOS-compatible alternative with enhanced write/erase endurance compared to FLASH while not demanding severe changes of the manufacturing process at the same time. Here, the charge-storing silicon na
TRUST
发表于 2025-3-27 01:33:15
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歹徒
发表于 2025-3-27 07:40:39
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Facet-Joints
发表于 2025-3-27 11:09:40
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敬礼
发表于 2025-3-27 13:42:54
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客观
发表于 2025-3-27 21:47:37
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窒息
发表于 2025-3-27 22:01:50
Engineering Materials and Processeshttp://image.papertrans.cn/m/image/625840.jpg
ethereal
发表于 2025-3-28 02:59:36
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使增至最大
发表于 2025-3-28 09:15:27
Thin-film Engineering by Atomic-layer Deposition for Ultra-scaled and Novel Devicesonics. Growth temperature, surface preparation and functionalization, and precursor combinations, when properly selected, allow achieving the desired film properties. Improvements in ALD film quality require a deeper knowledge of the growth mechanisms involved, while substrates, precursors, and deposition parameters change.
Innovative
发表于 2025-3-28 10:49:55
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