珍爱 发表于 2025-3-21 17:09:11

书目名称Low-Dimensional Structures in Semiconductors影响因子(影响力)<br>        http://impactfactor.cn/if/?ISSN=BK0588858<br><br>        <br><br>书目名称Low-Dimensional Structures in Semiconductors影响因子(影响力)学科排名<br>        http://impactfactor.cn/ifr/?ISSN=BK0588858<br><br>        <br><br>书目名称Low-Dimensional Structures in Semiconductors网络公开度<br>        http://impactfactor.cn/at/?ISSN=BK0588858<br><br>        <br><br>书目名称Low-Dimensional Structures in Semiconductors网络公开度学科排名<br>        http://impactfactor.cn/atr/?ISSN=BK0588858<br><br>        <br><br>书目名称Low-Dimensional Structures in Semiconductors被引频次<br>        http://impactfactor.cn/tc/?ISSN=BK0588858<br><br>        <br><br>书目名称Low-Dimensional Structures in Semiconductors被引频次学科排名<br>        http://impactfactor.cn/tcr/?ISSN=BK0588858<br><br>        <br><br>书目名称Low-Dimensional Structures in Semiconductors年度引用<br>        http://impactfactor.cn/ii/?ISSN=BK0588858<br><br>        <br><br>书目名称Low-Dimensional Structures in Semiconductors年度引用学科排名<br>        http://impactfactor.cn/iir/?ISSN=BK0588858<br><br>        <br><br>书目名称Low-Dimensional Structures in Semiconductors读者反馈<br>        http://impactfactor.cn/5y/?ISSN=BK0588858<br><br>        <br><br>书目名称Low-Dimensional Structures in Semiconductors读者反馈学科排名<br>        http://impactfactor.cn/5yr/?ISSN=BK0588858<br><br>        <br><br>

Jacket 发表于 2025-3-21 20:20:31

Impurities in Semiconductorshe application of methods other than junction space charge techniques (JSCT). Chalcogens and several transition metals in silicon are used as examples in order to show how important parameters and properties of defects can be revealed by using spectroscopic methods. One of the methods, namely photot

Promotion 发表于 2025-3-22 03:46:15

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摆动 发表于 2025-3-22 06:38:52

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颂扬国家 发表于 2025-3-22 12:39:44

Metal Organic Vapour Phase Epitaxy for the Growth of Semiconductor Structures and Strained Layerstransistors were fabricated from germanium, later from silicon. It was soon realized that also the A.–B. or A. – B. materials (most often simply termed III–V or II–VI materials) exhibited semiconductive behaviour. The energy difference between the valence band and the conduction band made them candi

Charitable 发表于 2025-3-22 15:40:00

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保守 发表于 2025-3-22 18:34:41

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蘑菇 发表于 2025-3-22 22:59:37

Chemical Interfaces: Structure, Properties and Relaxation properties of materials by the creation of interfaces. ‘Band gap engineering’, the attempt to tailor the electronic properties of semiconductors by interleaving many dissimilar layers is an extreme example of this approach. Technologically most advanced and thus most widely used are interfaces betw

存在主义 发表于 2025-3-23 01:55:59

Capacitance-Voltage Profiling of Multilayer Semiconductor Structures heterojunction band offsets . It has been recognised that a profile of the free electron concentration n(x) is obtained from C-V techniques rather than that of the doping profile N.(x). These are not necessarily the same even for the case of very shallow donors. Indeed, they will be differen

meritorious 发表于 2025-3-23 05:53:09

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查看完整版本: Titlebook: Low-Dimensional Structures in Semiconductors; From Basic Physics t A. R. Peaker,H. G. Grimmeiss Book 1991 Springer Science+Business Media N