Fillmore 发表于 2025-3-21 19:45:35
书目名称Low Dielectric Constant Materials for IC Applications影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0588762<br><br> <br><br>书目名称Low Dielectric Constant Materials for IC Applications影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0588762<br><br> <br><br>书目名称Low Dielectric Constant Materials for IC Applications网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0588762<br><br> <br><br>书目名称Low Dielectric Constant Materials for IC Applications网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0588762<br><br> <br><br>书目名称Low Dielectric Constant Materials for IC Applications被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0588762<br><br> <br><br>书目名称Low Dielectric Constant Materials for IC Applications被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0588762<br><br> <br><br>书目名称Low Dielectric Constant Materials for IC Applications年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0588762<br><br> <br><br>书目名称Low Dielectric Constant Materials for IC Applications年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0588762<br><br> <br><br>书目名称Low Dielectric Constant Materials for IC Applications读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0588762<br><br> <br><br>书目名称Low Dielectric Constant Materials for IC Applications读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0588762<br><br> <br><br>expire 发表于 2025-3-21 22:54:06
http://reply.papertrans.cn/59/5888/588762/588762_2.png损坏 发表于 2025-3-22 03:49:43
Plasma-Enhanced Chemical Vapor Deposition of FSG and a-C:F Low-, Materials,as the resistance of the wiring metals. For this reason, a great deal of effort has been spent in developing low dielectric constant (low-κ) materials that can reduce the parasitic capacitance of interconnects in ULSI circuits [.].草率女 发表于 2025-3-22 05:29:30
Integration of SiLK Semiconductor Dielectric,ning, and clean and metallization) required to produce an interconnect structure are discussed in detail. Special attention is given to the lithographic bene- fits that can be obtained when using SiLK semiconductor dielectric in the different schemes. Finally, a brief cost-of-ownership discussion is provided.commute 发表于 2025-3-22 10:05:08
Book 2003tant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging applications in microelectronics. Highly informative contributions from leading academic and industrial laboratories provide comprehensive information about mBadger 发表于 2025-3-22 16:02:39
1437-0387 terial: Low dielectric constant materials are an important component of microelectronic devices. This comprehensive book covers the latest low-dielectric-constant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packagingGNAT 发表于 2025-3-22 18:15:18
http://reply.papertrans.cn/59/5888/588762/588762_7.png特别容易碎 发表于 2025-3-22 22:56:27
Overview on Low Dielectric Constant Materials for IC Applications,actors for ultra-large-scale integration of integrated circuits. Materials with low dielectric constant are being developed to replace silicon dioxide as interlevel dielectrics. This chapter provides an overview on the basic issues of low-k dielectrics for interconnect applications and serves as a fBYRE 发表于 2025-3-23 03:37:15
http://reply.papertrans.cn/59/5888/588762/588762_9.png省略 发表于 2025-3-23 09:16:12
Structure and Property Characterization of Low-, Dielectric Porous Thin Films Determined by X-Ray Rn scattering has been developed. The average pore size, pore connectivity, film thickness, wall or matrix density, coefficient of thermal expansion, and moisture uptake of nanoporous thin films with nonhomogeneous solid matrices can be measured. The measurements can be performed directly on films up