评论者 发表于 2025-3-27 00:40:22
Studies of Semiconductor Surfaces and Interfaces by Three-Wave Mixing Spectroscopyronic transitions at the insulator/semiconductor interface formed by CaF./Si(111). These measurements led to a determination of the “interface” band gap, i.e. the minimum energy separation between filled and empty interface states. The interface band gap is found to differ strongly from that of eith名字 发表于 2025-3-27 01:09:10
Time-Resolved Resonant Reflection of Light appear in a linear reflection process and are treated apart from nonlinear cases where . itself is modified by a strong (additional) incident field. We prefer to call the latter case transient reflectivity and to use the term transient reflection to denote linear response.Inflamed 发表于 2025-3-27 05:57:15
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Book 1991s" (New York, 1979), and "Laser Optics of Condensed Matter" (Leningrad, 1987). These meetings were evaluated by the participants as highly successful and provided invaluable oppor tunities for researchers to exchange information and to initiate colla borative work which led to research visits by Unarcissism 发表于 2025-3-27 23:43:22
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Quasielastic Electronic Light Scattering in Semiconductors at Low Concentrations of Current Carriers. cm., when the condition for strong screening holds . where r. is the electron screening radius. Light scattering is possible in this case only due to special mechanisms providing the neutrality condition. Quasielastic light scattering spectra have a Lorentzian shape which indicates the diffusive motion of carriers in heavily doped materials..显赫的人 发表于 2025-3-28 09:45:24
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