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发表于 2025-4-1 04:56:52
Philippe Gaudu,Karin Vido,Bénédicte Cesselin,Saulius Kulakauskas,Josselyne Tremblay,Lahcen Rezaïki,G bases result in very different etch rates. Underlying chemistry is used for all three applications. Typical cleaning mixtures such as RCA-SC1 and RCA-SC2, SPM, and dHF are introduced with their respective properties as well as acidic etching systems like hydrofluoric acid/nitric acid (HF/HNO.) and
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发表于 2025-4-1 09:51:59
Catherine Tanous,Agnieszka Kieronczyk,Sandra Helinck,Emilie Chambellon,Mireille Yvone condition to maintain or even improve the wafer quality. This additional requirement becomes even more important because wafer and wire thickness will decrease in the future and the standard loose abrasive sawing technique will be replaced by the fixed abrasive sawing technique..The essential qual