debris
发表于 2025-3-30 08:47:42
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Crater
发表于 2025-3-30 12:38:57
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柏树
发表于 2025-3-30 16:37:12
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Encapsulate
发表于 2025-3-30 23:40:41
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驾驶
发表于 2025-3-31 01:32:52
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轻快来事
发表于 2025-3-31 06:13:54
Rudolf Beyernhance the data retention time for operation at near-threshold voltage (NTV). First, a 3-transistor (3T) gain-cell (GC) using a full transmission gate (TG) write port is presented. This full TG 3T GC bitcell allows fast write operations as well as memory operation at a single supply voltage, whereas