不妥协
发表于 2025-3-27 00:51:47
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Irrigate
发表于 2025-3-27 03:17:21
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Harpoon
发表于 2025-3-27 06:20:50
Stephan Strasseride) (PVDF) and polyvinylidene fluoride trifluoroethylene thin films as ferroelectric layer. PVDF and P(VDF-TrFE) thin films were fabricated by sol–gel method on Si(100) wafers. The drain current–gate voltage (.–.) characteristics of the fabricated MFSFETs with PVDF and P(VDF-TrFE) thi
reptile
发表于 2025-3-27 10:56:03
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补助
发表于 2025-3-27 14:11:33
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蛙鸣声
发表于 2025-3-27 19:30:34
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抗生素
发表于 2025-3-27 23:24:26
Stephan StrasserZnO, a ferroelectric film of Pb(Zr,Ti)O. (PZT), and a bottom-gate electrode of SrRuO. (SRO) are grown on a SrTiO. substrate. Structural characterization shows a heteroepitaxy of the fabricated ZnO/PZT/SRO/STO structure with a good crystalline quality and absence of an interface reaction layer. When
阐释
发表于 2025-3-28 05:18:07
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Bureaucracy
发表于 2025-3-28 09:01:43
Stephan Strassertality, better scalability, higher read–write speeds, lower dissipation powers, higher tamper resistances, and higher radioactivity tolerance. But memory retention was the most critical problem for its practical realization. Mechanisms of degradation of the retention are discussed in metal–ferroelec
canvass
发表于 2025-3-28 11:04:53
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