intricacy 发表于 2025-3-23 11:14:07
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Ion Implantation: Equipment and Techniques978-3-642-69156-0Series ISSN 0172-5734ANTI 发表于 2025-3-24 01:42:01
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https://doi.org/10.1007/978-3-642-69156-0Apertur; Implantation; Ionenimplantation; Planar; Plantation; Plasmat; information; laser; metals; paper; poly戏法 发表于 2025-3-24 08:51:29
Physical Limitations of Ion Implantation EquipmentWhen the physical limitations of ion implantation systems are examined, several constraints related to the generation, analysis and scanning of energetic ion beams can be readily identified which will clearly limit the performance of this equipment. These constraints will probably be relevant to most applications of the ion implantation technique.conjunctivitis 发表于 2025-3-24 13:14:37
An Ion Source for Semiconductor ImplantationAn ion source is described which can produce ions of species possessing various chemical and physical properties. A limited review of the source characteristics is also given.踉跄 发表于 2025-3-24 18:35:13
Radio Frequency Ion Acceleratorseries of linear drift tubes. The r.f. power supply was self-oscillating which made the system very simple to run and in general its compact design makes it very economical to build for a range of non-relativistic ions.现存 发表于 2025-3-24 19:25:31
Performance of the Bethge-Baumann Ion Source with Radio Frequency Operationr transistors . These rather shallow structures ( ≃ 1 .m) are required for high frequency operation. Direct implantation eliminates the need for epitaxial growth which is difficult to implement for such thin layers.涂掉 发表于 2025-3-24 23:14:16
Multipole Ion Source for Ion Implantation and Isotope Separation source has a single slit extractor. The multipole field was created by a combination of rare-earth cobalt magnets with iron yoke and pole structure. The magnetic structure is freon cooled and surrounds a graphite arc chamber. We tested 4, 6, and 10-pole configurations.