勉励
发表于 2025-3-23 13:37:29
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Chronic
发表于 2025-3-23 14:52:41
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heterodox
发表于 2025-3-23 20:16:17
Ion Implantation in Compound Semiconductor and Buried Layer Synthesis, state devices is based on silicon wafers and this might justify the choice. Regardless of the small quantity in which are produced devices based on compound semiconductors, e.g.. . and ., are of extremely relevance in optoelectronics, in high frequency applications and in the photon-electrical carrier conversion.
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发表于 2025-3-23 22:56:49
The Springer International Series in Engineering and Computer Sciencehttp://image.papertrans.cn/i/image/475177.jpg
comely
发表于 2025-3-24 04:27:52
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Bernstein-test
发表于 2025-3-24 09:02:11
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Invertebrate
发表于 2025-3-24 13:35:34
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essential-fats
发表于 2025-3-24 17:26:03
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刚毅
发表于 2025-3-24 19:35:21
Range Distribution,th respect the main axes or planes in the case of a single crystal target as the silicon wafer. The total distance which an ion of mass .. travels in coming to rest in a target of atoms of mass .. is the range R and is shown in Fig.3.1.
冲击力
发表于 2025-3-25 01:59:53
0893-3405 l within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, m