Capricious
发表于 2025-3-21 18:09:27
书目名称Ion Implantation: Basics to Device Fabrication影响因子(影响力)<br> http://impactfactor.cn/2024/if/?ISSN=BK0475177<br><br> <br><br>书目名称Ion Implantation: Basics to Device Fabrication影响因子(影响力)学科排名<br> http://impactfactor.cn/2024/ifr/?ISSN=BK0475177<br><br> <br><br>书目名称Ion Implantation: Basics to Device Fabrication网络公开度<br> http://impactfactor.cn/2024/at/?ISSN=BK0475177<br><br> <br><br>书目名称Ion Implantation: Basics to Device Fabrication网络公开度学科排名<br> http://impactfactor.cn/2024/atr/?ISSN=BK0475177<br><br> <br><br>书目名称Ion Implantation: Basics to Device Fabrication被引频次<br> http://impactfactor.cn/2024/tc/?ISSN=BK0475177<br><br> <br><br>书目名称Ion Implantation: Basics to Device Fabrication被引频次学科排名<br> http://impactfactor.cn/2024/tcr/?ISSN=BK0475177<br><br> <br><br>书目名称Ion Implantation: Basics to Device Fabrication年度引用<br> http://impactfactor.cn/2024/ii/?ISSN=BK0475177<br><br> <br><br>书目名称Ion Implantation: Basics to Device Fabrication年度引用学科排名<br> http://impactfactor.cn/2024/iir/?ISSN=BK0475177<br><br> <br><br>书目名称Ion Implantation: Basics to Device Fabrication读者反馈<br> http://impactfactor.cn/2024/5y/?ISSN=BK0475177<br><br> <br><br>书目名称Ion Implantation: Basics to Device Fabrication读者反馈学科排名<br> http://impactfactor.cn/2024/5yr/?ISSN=BK0475177<br><br> <br><br>
使人烦燥
发表于 2025-3-21 20:34:16
Ion Implanters,column, a scanning system and an end station . The ion source contains the species to be implanted either as solids, or as liquids or as gases and an ionizing system to ionize the species. The source produces an ion beam with very small energy spread enabling high mass resolution. Ions are extr
祝贺
发表于 2025-3-22 01:10:47
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涂掉
发表于 2025-3-22 08:00:06
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accrete
发表于 2025-3-22 11:40:30
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rectum
发表于 2025-3-22 16:27:33
Analytical Techniques,process. All the available techniques, either destructive or nondestructive, have been used to characterize the implanted layers mainly for these two aspects: depth profile of the implanted species and of the damage. The dopant profile measurements require techniques able to reach the low concentrat
Subjugate
发表于 2025-3-22 21:00:43
Silicon Based Devices,trol in the number of introduced ions. The most complex memory and microprocessor chips require during their fabrication from 10 to 15 implant steps. With the development of new structures other implants are added to improve the electrical behavior of devices. Implants are used to form source and dr
向下
发表于 2025-3-22 23:54:43
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招待
发表于 2025-3-23 03:45:35
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Monolithic
发表于 2025-3-23 07:37:48
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