Grant
发表于 2025-3-21 17:46:16
书目名称Ion Implantation in Semiconductors and Other Materials影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0475176<br><br> <br><br>书目名称Ion Implantation in Semiconductors and Other Materials影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0475176<br><br> <br><br>书目名称Ion Implantation in Semiconductors and Other Materials网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0475176<br><br> <br><br>书目名称Ion Implantation in Semiconductors and Other Materials网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0475176<br><br> <br><br>书目名称Ion Implantation in Semiconductors and Other Materials被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0475176<br><br> <br><br>书目名称Ion Implantation in Semiconductors and Other Materials被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0475176<br><br> <br><br>书目名称Ion Implantation in Semiconductors and Other Materials年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0475176<br><br> <br><br>书目名称Ion Implantation in Semiconductors and Other Materials年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0475176<br><br> <br><br>书目名称Ion Implantation in Semiconductors and Other Materials读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0475176<br><br> <br><br>书目名称Ion Implantation in Semiconductors and Other Materials读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0475176<br><br> <br><br>
废止
发表于 2025-3-22 00:13:08
Concentration Profiles of Arsenic Implanted in Silicon. The nearly gaussian components agree with the prediction by the LSS theory. The exponential shape was not observed in heavily damaged silicon. The slope of the exponential tail is independent of a dose, substrate temperature and ion energy. It is proposed that this tail is caused by a rapid diffusion process such as interstitial diffusion.
伟大
发表于 2025-3-22 02:27:12
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CAJ
发表于 2025-3-22 08:22:59
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modest
发表于 2025-3-22 09:19:46
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Obstruction
发表于 2025-3-22 14:21:41
The Effect of Ion Implantation on the Lattice Location of Arsenic in Arsenic — Doped Siof diffusing distances greater than lμm before causing the off site movement of an arsenic atom. Annealing of the tellurium bombarded samples to 700 to 800°C restores most of the off site arsenic to substitutional positions in the lattice.
HERE
发表于 2025-3-22 18:44:02
Experimental Analysis of Concentration Profiles of Boron Implanted in Siliconh as temperature, crystal direction, crystal perfection. The boron profiles in amorphous silicon were compared with theory. Another aspect studied is the profile distortion due to heat treatments. By comparison of the boron profiles with corresponding electrical profiles valuable additional information was obtained.
LASH
发表于 2025-3-23 00:23:32
nding and exciting research area. The advances in this field were so rapid that a second conference convened at Garmisch Partenkirchen, Germany, in 1971. At the present time, our under standing of the ion implantation process in semiconductors such as Si and Ge has reached a stage of maturity and
字谜游戏
发表于 2025-3-23 04:56:58
Calorimetric Determination of Optical Absorption in Proton-Bombarded GaAsn the square of the photon energy has been observed in other measurements for high fluence Xe ion implantation. Seventy percent of the proton-induced attenuation anneals below 300°C in agreement with previously measured neutron-induced optical attenuation.
绑架
发表于 2025-3-23 07:59:24
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