烤问
发表于 2025-3-21 16:08:32
书目名称Ion Implantation Techniques影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0475170<br><br> <br><br>书目名称Ion Implantation Techniques影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0475170<br><br> <br><br>书目名称Ion Implantation Techniques网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0475170<br><br> <br><br>书目名称Ion Implantation Techniques网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0475170<br><br> <br><br>书目名称Ion Implantation Techniques被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0475170<br><br> <br><br>书目名称Ion Implantation Techniques被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0475170<br><br> <br><br>书目名称Ion Implantation Techniques年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0475170<br><br> <br><br>书目名称Ion Implantation Techniques年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0475170<br><br> <br><br>书目名称Ion Implantation Techniques读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0475170<br><br> <br><br>书目名称Ion Implantation Techniques读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0475170<br><br> <br><br>
事情
发表于 2025-3-21 21:21:36
Electrical Measuring Techniquesable information regarding the energy and purity of the ion beam. The techniques are discussed mainly with respect to measurements on implanted silicon wafers but they may be applied more generally to any semiconductor.
BUOY
发表于 2025-3-22 04:22:56
Faraday Cup Designs for Ion Implantation flux and areal distribution of the dopant material. A given target response to the incident ions can be used as a continuous monitor of the implant status and, under proper conditions, can provide a means for closed-loop process control.
品牌
发表于 2025-3-22 06:00:37
Range Distributionstended to calculate higher moments of the range distributions. Winterbon calculated 4 moments of range distributions for many ion- target combinations; however, no easily accessible tables or formulas (such as those by Gibbons , Smith ,and Biersack ) are available. Only Gibbons gives an estimate of the third moment.
失眠症
发表于 2025-3-22 11:39:32
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intrigue
发表于 2025-3-22 16:29:19
Standard High-Voltage Power Supplies for Ion Implantationmake a decision on the standardization of the power supply. Standardization means compromising and giving up the possibility of covering the entire range of users electrical data. In our standard line of high-voltage dc power supplies, special consideration is given to the following basic design features:
褪色
发表于 2025-3-22 19:56:40
Springer Series in Electronics and Photonicshttp://image.papertrans.cn/i/image/475170.jpg
gerontocracy
发表于 2025-3-22 23:10:17
https://doi.org/10.1007/978-3-642-68779-2Absorption; Apertur; Plasmat; computer; design; development; machine; material; mechanisms; model; production;
使长胖
发表于 2025-3-23 02:18:19
Ion Implantation System Concepts the presently available commercial equipment is presented. The system-limiting aspects, such as throughput, uniformity, wafer heating, energy range, wafer size, charge-up, and contamination, are reported in detail. Finally, some remarks on the operation and control of an ion implanter are made.
interrogate
发表于 2025-3-23 07:34:10
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