ARGOT
发表于 2025-3-21 16:05:34
书目名称Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology No影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0474793<br><br> <br><br>书目名称Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology No影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0474793<br><br> <br><br>书目名称Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology No网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0474793<br><br> <br><br>书目名称Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology No网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0474793<br><br> <br><br>书目名称Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology No被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0474793<br><br> <br><br>书目名称Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology No被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0474793<br><br> <br><br>书目名称Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology No年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0474793<br><br> <br><br>书目名称Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology No年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0474793<br><br> <br><br>书目名称Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology No读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0474793<br><br> <br><br>书目名称Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology No读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0474793<br><br> <br><br>
离开就切除
发表于 2025-3-21 20:23:40
Book 2019al growth, with a special focus on its patterndependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS..
一回合
发表于 2025-3-22 01:34:41
Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology No
Glossy
发表于 2025-3-22 04:58:10
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Between
发表于 2025-3-22 08:44:42
Springer Theseshttp://image.papertrans.cn/i/image/474793.jpg
Cumbersome
发表于 2025-3-22 16:45:34
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Glucose
发表于 2025-3-22 17:03:35
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他姓手中拿着
发表于 2025-3-22 22:49:39
https://doi.org/10.1007/978-981-15-0046-6SiGe; RPCVD; source/drain technology; selective epitaxy; technology nodes; strain; pattern dependency
Anemia
发表于 2025-3-23 04:48:10
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CRACY
发表于 2025-3-23 07:00:32
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