传家宝
发表于 2025-3-21 18:59:41
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阶层
发表于 2025-3-21 23:23:49
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MAIZE
发表于 2025-3-22 04:02:22
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地壳
发表于 2025-3-22 08:20:18
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SCORE
发表于 2025-3-22 09:20:03
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Soliloquy
发表于 2025-3-22 14:43:36
Semiconductor , Junction Devices,ains the negative dynamic resistance characteristic of this device. Finally, the junction field effect transistor is discussed, also qualitatively, and its function as a voltage-controlled amplifier is treated.
famine
发表于 2025-3-22 17:16:27
Physics of Metal-Semiconductor and Metal-Insulator-Semiconductor Junctions, the band diagram of an idealized MIS structure. The key result is the formation of an inversion layer at the insulator-semiconductor interface when an appropriate potential is applied. This result will be used in the next chapter to study two important devices, the induced-channel field-effect transistor and the charge-coupled device.
好忠告人
发表于 2025-3-22 21:40:50
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Arthropathy
发表于 2025-3-23 03:37:26
Superconductive Devices and Materials,ting ring leads to the idea of superconducting quantum interference and devices (DC SQUIDs) based thereon. Finally, the chapter concludes with a discussion of superconducting materials, with emphasis on the factors determining the magnitudes of the transition temperature, the critical magnetic field, and, briefly, the critical current density.
袭击
发表于 2025-3-23 06:19:33
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