Annihilate
发表于 2025-3-21 17:45:04
书目名称Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0473261<br><br> <br><br>书目名称Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0473261<br><br> <br><br>书目名称Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0473261<br><br> <br><br>书目名称Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0473261<br><br> <br><br>书目名称Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0473261<br><br> <br><br>书目名称Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0473261<br><br> <br><br>书目名称Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0473261<br><br> <br><br>书目名称Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0473261<br><br> <br><br>书目名称Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0473261<br><br> <br><br>书目名称Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0473261<br><br> <br><br>
宽宏大量
发表于 2025-3-21 23:05:10
Isovalent Impurities, not have sufficed for a presentation of silicon-germanium materials in general. Tin, the last isovalent impurity considered here, has already limited technical applications. However, it was studied to investigate basic diffusion processes in silicon. The main results will be presented in Section 4.3.
Kindle
发表于 2025-3-22 03:04:18
Halogens,ects were also mentioned in the literature. In addition, fluorine was found to enhance oxide growth and to reduce the associated generation of self-interstitials. Its presence at silicon/silicon dioxide interfaces was associated with a variety of advantages while fluorine in the bulk of oxides may have detrimental effects.
Truculent
发表于 2025-3-22 07:30:34
Book 2004rst comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Special emphasis is placed on compiling the structures, energetic properties, identified electrical levels and sp
BOOM
发表于 2025-3-22 12:25:00
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licence
发表于 2025-3-22 15:48:30
Chalcogens,, and tellurium, were found to show the expected double-donor properties. They were also found to be very similar, showing a tendency to form pairs which also act as double donors. A comprehensive review of their properties was given by Grimmeiss and Janzén [.]. For the sake of space, only the most important facts can be recapitulated here.
Biguanides
发表于 2025-3-22 17:52:34
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Clinch
发表于 2025-3-23 01:03:03
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缩影
发表于 2025-3-23 03:49:55
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opinionated
发表于 2025-3-23 08:33:58
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