pus840
发表于 2025-4-1 05:28:21
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强制令
发表于 2025-4-1 09:26:14
Comparative Analysis of 10T SRAM Cell using Nanodevices,-speed integrated circuits (ICs) leads to scaling the CMOS devices. The limitation of MOSFET scaling introduced the new transistor technology. The paper introduced the comparative analysis of 10T SRAM cell design using CMOS, FinFET, and CNTFET. Performance analysis is carried out by using power cons
Innocence
发表于 2025-4-1 11:42:43
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Generosity
发表于 2025-4-1 14:21:33
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MULTI
发表于 2025-4-1 20:44:20
Performance Analysis of Oxide Capacitance at Gate-Dielectric Variation in Surrounding-Gate MOSFET Stion operation. The analysis is based upon the resemblance of the device oxide capacitance in the device pinch-off. The capacitance formation at pinch-off cannot be considered a cylindrical parallel plate; therefore, the capacitance results differently from conventional computing of capacitance depe
sleep-spindles
发表于 2025-4-2 00:38:14
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syring
发表于 2025-4-2 05:05:37
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