Cantankerous
发表于 2025-3-23 15:13:12
Impact of Variation of Performance Parameters on the Efficiency of CNTFET Based 7T SRAM Cells,er of CNTFETs for the designing of SRAM. CNTFET based SRAMs are available with 6T, 7T, 8T, 9T, and many more. This paper includes a conventional 7T SRAM cell and a new SRAM cell is also proposed that is also designed using 7T. Both cells are compared in terms of their efficiency with the variation of performance parameters of CNTFET.
格子架
发表于 2025-3-23 18:26:46
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清澈
发表于 2025-3-24 00:56:11
A Case Study on Electric Vehicle Conversion from an Internal Combustion Engine Vehicle,urrent and power consumption, motor and controller temperature, and error from motor controller using the CAN port. Then, process the data and send it to an android device. And an android application is developed to show that real-time data into a GUI. The driver can also control the electrical peri
纺织品
发表于 2025-3-24 05:31:25
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物种起源
发表于 2025-3-24 07:36:39
Minimization of Tie-Line Power Fluctuations using GCSC with Gas-Thermal-EV System for LFC Considerithm (FF-A) optimization techniques are implemented to find the control variables. Time-delay effect is also taken into consideration, and the system under study is demonstrated in MATLAB/Simulink environment. The simulation results show that FF-A has low oscillation, very small undershoot, and have
空洞
发表于 2025-3-24 10:40:21
Investigation of Timing Issues of True Single-Phase Clock Circuits for Nanodevices,Clock (TSPC) logic as an appropriate choice of logic that can lead to high performance as compared to dynamic and domino logic circuits. In this paper, we have compared the basic logic circuits (AND, NAND, OR, NOR) over other circuits like Dynamic and Domino techniques with TSPC logic. The results s
diabetes
发表于 2025-3-24 17:28:44
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aphasia
发表于 2025-3-24 20:45:59
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CHIP
发表于 2025-3-25 00:25:18
Performance Analysis of Oxide Capacitance at Gate-Dielectric Variation in Surrounding-Gate MOSFET S decreasing . value of the gate-oxide materials. The analysis results are promising for enhancing switching characteristics using different gate-dielectric materials. The device simulation results in DIBL for . = 25, i.e., HfO. ~ 35.56 mV/V (for . = 3.9, i.e., SiO. ~ 97.23 mV/V), subthreshold swing
needle
发表于 2025-3-25 05:55:09
Current Status of Renewable Energy Sources in India and Its Utilization in Hybrid Energy System, bus is discussed in this paper. This type of system supports the power system and cost-effective operation. Some upcoming Wind-Solar Park projects which can contribute to the targets of RES programme in a country are also mentioned.