FAULT
发表于 2025-3-21 20:01:10
书目名称Integrated Circuit Defect-Sensitivity: Theory and Computational Models影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0468443<br><br> <br><br>书目名称Integrated Circuit Defect-Sensitivity: Theory and Computational Models影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0468443<br><br> <br><br>书目名称Integrated Circuit Defect-Sensitivity: Theory and Computational Models网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0468443<br><br> <br><br>书目名称Integrated Circuit Defect-Sensitivity: Theory and Computational Models网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0468443<br><br> <br><br>书目名称Integrated Circuit Defect-Sensitivity: Theory and Computational Models被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0468443<br><br> <br><br>书目名称Integrated Circuit Defect-Sensitivity: Theory and Computational Models被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0468443<br><br> <br><br>书目名称Integrated Circuit Defect-Sensitivity: Theory and Computational Models年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0468443<br><br> <br><br>书目名称Integrated Circuit Defect-Sensitivity: Theory and Computational Models年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0468443<br><br> <br><br>书目名称Integrated Circuit Defect-Sensitivity: Theory and Computational Models读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0468443<br><br> <br><br>书目名称Integrated Circuit Defect-Sensitivity: Theory and Computational Models读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0468443<br><br> <br><br>
混沌
发表于 2025-3-21 20:49:02
Defect Semantics and Yield Modeling,luding the necessary relationship between process induced defects and faults.The second main topic is an objective discussion on yield modeling, it’s difficulties and development through the last 30 years.
才能
发表于 2025-3-22 03:57:36
Introduction,it area (defect density). By understanding the effect of defects in IC designs, it is possible to devise yield tolerant methodologies, e.g. module allocation with “balanced defect sensitivities”, “defect tolerant” driven techniques for placement and routing, etc.
危险
发表于 2025-3-22 06:01:14
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锉屑
发表于 2025-3-22 08:45:34
Single Defect Multiple Layer (SDML) Model, either a short or a break. Yet if the defect falls in the poly-diffusion area of a transistor it can be fatal even if it does not totally break the geometrical pattern. It is thus not sufficient to extract single-layer critical areas if either an accurate yield prediction or a realistic layout to fault extraction are desired.
RECUR
发表于 2025-3-22 15:42:23
IC Yield Prediction and Single Layer Critical Areas,s implementing the same function. The layout styles are Standard Cells (STD), Programmable Logic Array (PLA), and Transistor Gate Matrix (TM), see Fig. 7.1. The technology is CMOS of 2µm of minimum resolution features.
CERE
发表于 2025-3-22 17:31:52
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灾祸
发表于 2025-3-23 00:53:06
The Springer International Series in Engineering and Computer Sciencehttp://image.papertrans.cn/i/image/468443.jpg
预防注射
发表于 2025-3-23 04:59:47
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candle
发表于 2025-3-23 07:47:38
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