闪烁
发表于 2025-3-21 17:20:24
书目名称Insulating Films on Semiconductors影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0468167<br><br> <br><br>书目名称Insulating Films on Semiconductors影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0468167<br><br> <br><br>书目名称Insulating Films on Semiconductors网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0468167<br><br> <br><br>书目名称Insulating Films on Semiconductors网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0468167<br><br> <br><br>书目名称Insulating Films on Semiconductors被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0468167<br><br> <br><br>书目名称Insulating Films on Semiconductors被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0468167<br><br> <br><br>书目名称Insulating Films on Semiconductors年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0468167<br><br> <br><br>书目名称Insulating Films on Semiconductors年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0468167<br><br> <br><br>书目名称Insulating Films on Semiconductors读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0468167<br><br> <br><br>书目名称Insulating Films on Semiconductors读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0468167<br><br> <br><br>
capsaicin
发表于 2025-3-21 21:18:27
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Muffle
发表于 2025-3-22 01:36:50
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DEAWL
发表于 2025-3-22 07:55:57
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山顶可休息
发表于 2025-3-22 10:51:17
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口音在加重
发表于 2025-3-22 16:32:05
A Study of MIS Structures Prepared Under Ultra-High-Vacuum ConditionsIn present semiconductor device technology (MIS, MISS …) the Si-SiO. interface is a vital part. The realization of very thin and pure oxide films (less than 30 Å for some applications) is very difficult to control under classical ways due to
高度
发表于 2025-3-22 19:24:23
Electrical Properties of Ultrathin Oxide Layers Formed by DC Plasma AnodizationIt appears that insufficient control over the ultrathin (25–50 Å) oxides growth process and stability still limits the further development of MIS tunnel devices such as solar cells, various transistor structures, and switching devices.
木质
发表于 2025-3-22 23:35:33
Influence of Different Technologies of Metal Deposition and of Oxide Growth on the Electronic ProperWe study the influence of different technological processes on the electronic properties of the Si-SiO. interface of Al-SiO.-Si (N-type) MIS tunnel diodes. I(V) (in darkness or under illumination) and C(V), G(V) characteristics (100 Hz ≤ f ≤ 1 MHz) are plotted and analysed.
Evacuate
发表于 2025-3-23 03:05:35
Photoelectric Methods as a Tool for the Analysis of Current Flow Mechanism in MIS Tunnel DiodesIn Fig. 1 the energy band diagram of the illuminated MIS tunnel diode is shown.
Organization
发表于 2025-3-23 08:10:03
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