geometrician
发表于 2025-3-23 13:30:22
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的’
发表于 2025-3-23 14:59:28
On the Si/SiO2 Interface Recombination Velocityin Integrated Injection Logic (I. L) gates, up to 40% {1,2} of the base current of the upward-down operated npn switching transistors is caused by this recombination and severely affects the current gain.
collateral
发表于 2025-3-23 21:43:22
Trapping Characteristics in SiO2d by the use of the Zeldovitsj equation. For a number of charging curves reproduced from published data this yields an excellent fit and a large reduction in scatter of the capture cross sections. A model is presented based on trapping site generation.
mendacity
发表于 2025-3-23 22:53:50
Springer Series in Electronics and Photonicshttp://image.papertrans.cn/i/image/468167.jpg
Extemporize
发表于 2025-3-24 03:17:09
Electronic Structure of the Si-SiO2 Interfaceed model which is designed to simulate the average contact between a silicon crystal and its oxide overlayer. According to this model, the Si/Si0. interface is represented by the boundary between two crystalline domains, the first being the silicon substrate, and the second an idealized crystalline
纬度
发表于 2025-3-24 10:09:38
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用树皮
发表于 2025-3-24 14:36:39
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疏忽
发表于 2025-3-24 16:29:17
Electronic and Optical Properties of SiO,e in the limiting materials, i.e., in Si and Si0.. This concerns, for example, the values of the bond length and the valence charge density and is in contrast to the behaviour of semiconducting mixed crystals. Therefore, it can be assumed that SiO. is an inhomogeneous medium on a bonding scale, i
Suppository
发表于 2025-3-24 22:13:10
Hydrogenation of Defects at the Si-SiO2 Interfaceell-documented manifestations: (1) a broad peak in the interface-state distribution , (2) a paramagnetic center in electron spin resonance (ESR), which has been identified as trivalent silicon . and (3) fixed positive space charge located in the oxide immediately adjacent to the interface. H
缓和
发表于 2025-3-25 01:10:59
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