快乐 发表于 2025-3-21 17:13:08

书目名称Hydrogen in Crystalline Semiconductors影响因子(影响力)<br>        http://figure.impactfactor.cn/if/?ISSN=BK0430412<br><br>        <br><br>书目名称Hydrogen in Crystalline Semiconductors影响因子(影响力)学科排名<br>        http://figure.impactfactor.cn/ifr/?ISSN=BK0430412<br><br>        <br><br>书目名称Hydrogen in Crystalline Semiconductors网络公开度<br>        http://figure.impactfactor.cn/at/?ISSN=BK0430412<br><br>        <br><br>书目名称Hydrogen in Crystalline Semiconductors网络公开度学科排名<br>        http://figure.impactfactor.cn/atr/?ISSN=BK0430412<br><br>        <br><br>书目名称Hydrogen in Crystalline Semiconductors被引频次<br>        http://figure.impactfactor.cn/tc/?ISSN=BK0430412<br><br>        <br><br>书目名称Hydrogen in Crystalline Semiconductors被引频次学科排名<br>        http://figure.impactfactor.cn/tcr/?ISSN=BK0430412<br><br>        <br><br>书目名称Hydrogen in Crystalline Semiconductors年度引用<br>        http://figure.impactfactor.cn/ii/?ISSN=BK0430412<br><br>        <br><br>书目名称Hydrogen in Crystalline Semiconductors年度引用学科排名<br>        http://figure.impactfactor.cn/iir/?ISSN=BK0430412<br><br>        <br><br>书目名称Hydrogen in Crystalline Semiconductors读者反馈<br>        http://figure.impactfactor.cn/5y/?ISSN=BK0430412<br><br>        <br><br>书目名称Hydrogen in Crystalline Semiconductors读者反馈学科排名<br>        http://figure.impactfactor.cn/5yr/?ISSN=BK0430412<br><br>        <br><br>

休息 发表于 2025-3-22 00:04:41

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愤愤不平 发表于 2025-3-22 00:47:28

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convert 发表于 2025-3-22 07:08:14

The Microscopic Characteristics of Impurity-Hydrogen Complexes in III-V Semiconductors,ved from infrared-absorption data. At present, there is only one theoretical study of impurity-H complexes . In this chapter, recent work on the IR absorption, configurations, and H motions for hydrogen-impurity complexes will be surveyed.

Excise 发表于 2025-3-22 10:00:21

Diffusion of Hydrogen in Semiconductors,e, and the method of hydrogen insertion. For example, hydrogen appears to diffuse more rapidly under conditions of low hydrogen concentration such as acid etching or boiling in water, than it does under conditions of high hydrogen concentration. The most obvious example of the latter is during exposure to a hydrogen plasma.

小歌剧 发表于 2025-3-22 16:07:01

Introduction,od of the middle and late nineteen eighties saw a tremendous amount of work performed on the properties of hydrogen in crystalline semiconductors such as Si, GaAs and related materials. It was soon established that atomic hydrogen passivates the electrical activity of both shallow acceptor and donor

Germinate 发表于 2025-3-22 20:02:53

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scrape 发表于 2025-3-22 21:12:57

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ear-canal 发表于 2025-3-23 04:26:18

Shallow Impurity Passivation by Atomic Hydrogen,oth acceptors and donors in Si, GaAs, GaP and AlGaAs, and has been observed for acceptors in Ge, CdTe, ZnTe and InP. It is likely therefore that this is a general effect, but it may be difficult to observe experimentally in some materials because of the unstable nature of the hydrogen-impuri

冬眠 发表于 2025-3-23 09:29:25

Microscopic Properties of Hydrogen-Related Complexes in Silicon from Vibrational Spectroscopy, impurities are, in most cases, not electrically active or paramagnetic. InfraRed (IR) absorption and Raman spectroscopy, however, have been especially effective for characterizing hydrogen related defects . The vibration of the light H in complexes occurs at frequencies well above intrinsic
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查看完整版本: Titlebook: Hydrogen in Crystalline Semiconductors; Stephen J. Pearton,James W. Corbett,Michael Stavol Book 1992 Springer-Verlag Berlin Heidelberg 199