安抚 发表于 2025-3-26 21:09:12

Stephen J. Pearton Ph. D.,James W. Corbett Ph. D.,Michael Stavola Ph. D.

ARBOR 发表于 2025-3-27 04:27:13

Stephen J. Pearton Ph. D.,James W. Corbett Ph. D.,Michael Stavola Ph. D.

费解 发表于 2025-3-27 06:00:54

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Reverie 发表于 2025-3-27 11:31:45

Stephen J. Pearton Ph. D.,James W. Corbett Ph. D.,Michael Stavola Ph. D.

AFFIX 发表于 2025-3-27 17:01:24

Stephen J. Pearton Ph. D.,James W. Corbett Ph. D.,Michael Stavola Ph. D.

LEER 发表于 2025-3-27 20:33:19

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JOG 发表于 2025-3-28 11:52:21

Hydrogen Incorporation in Crystalline Semiconductors,ll technology over the past two decades are due, in no small part, to the use of hydrogen passivation techniques . The net effect of hydrogen incorporation in disordered semiconductors is to make them more like their ordered counterparts. That is, the luminescent efficiency of amorphous or poly
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查看完整版本: Titlebook: Hydrogen in Crystalline Semiconductors; Stephen J. Pearton,James W. Corbett,Michael Stavol Book 1992 Springer-Verlag Berlin Heidelberg 199