向宇宙
发表于 2025-3-26 21:32:39
Velocity Overshoot and Suppression of Diffusivity and Microwave Noise in Short n+-n-n+ Structures ofFast devices usually require semiconductors with high drift velocity of electrons and prefer the conditions of operation favourable for low noise and diffusivity.
菊花
发表于 2025-3-27 01:42:49
http://reply.papertrans.cn/43/4268/426757/426757_32.png
alcoholism
发表于 2025-3-27 08:12:13
Novel Real-Space Transfer DevicesRecent results of studying novel, three-terminal, high-speed device based on the real-space hot electron transfer are presented. Two modes of operation of this device: the NERFET and the CHINT — for which the most impressive new data have been obtained, are discussed emphasizing the physics of their operation.
王得到
发表于 2025-3-27 09:38:45
http://reply.papertrans.cn/43/4268/426757/426757_34.png
极少
发表于 2025-3-27 17:10:01
http://reply.papertrans.cn/43/4268/426757/426757_35.png
muster
发表于 2025-3-27 21:18:54
Modelling of High Electron Velocity Effects for Devicesrt transit time of the electrons across the active region. The control currents have also to be high enough to cope with stray capacitances. In addition to these performances the devices must satisfy the absolute necessity of a reduced internal feedback and of low-impedance access zones.
山崩
发表于 2025-3-28 00:34:36
http://reply.papertrans.cn/43/4268/426757/426757_37.png
frivolous
发表于 2025-3-28 04:44:52
http://reply.papertrans.cn/43/4268/426757/426757_38.png
Glaci冰
发表于 2025-3-28 10:11:57
Mobility Overshoot of Hot Electronsobility of the hot carriers (photoinjected electrons and holes). For that purpose we resort to the use of the nonequilibrium statistical operator method (NSOM) in Zubarev’s approach , in the form already applied to the study of ultrafast relaxation phenomena in HEPS . A nonlinear transport the
Cardioversion
发表于 2025-3-28 14:14:00
Monte-Carlo Simulation of the Effects Induced by Real-Space Transfer in a HEMT. So, the device behavior is similar to MOST behavior if the large gap semiconductor upper layer is considered as an insulating layer. Nevertheless, the technology used to grow this layer allows for a greater interface quality than in the classical MOS transistor. Furthermore, non-stationary transpo