乌鸦
发表于 2025-3-21 17:32:53
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STALL
发表于 2025-3-21 23:43:43
Book 2020unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection ar
Gratulate
发表于 2025-3-22 02:56:27
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喷出
发表于 2025-3-22 05:30:23
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jagged
发表于 2025-3-22 09:27:04
Introduction and Overview,nsistors with much smaller and energy-efficient alternatives in data centers, miniature power adapters, and convertors, as well as making strides toward higher-power, high-voltage applications such as industrial and automotive motor control.
ESO
发表于 2025-3-22 14:52:07
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刺耳的声音
发表于 2025-3-22 20:28:22
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agenda
发表于 2025-3-22 23:52:18
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拾落穗
发表于 2025-3-23 03:57:55
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Digitalis
发表于 2025-3-23 07:24:34
Resonant Tunneling Transport in Polar III-Nitride Heterostructures,ctors. These advances allowed us to shed light into the physics of resonant tunneling transport in polar semiconductors which had remained hidden until now. This insight was obtained using a combined experimental and theoretical approach, leading to the discovery of new tunneling features, unique in