legitimate
发表于 2025-3-25 06:28:44
Hugo O. Condori Quispe,Berardi Sensale-Rodriguez,Patrick Fayof developed algorithms. The developed technique is applied to two types of blind experimental data, which are collected both in a laboratory and in the field. The result for the blind backscattering experimental data collected in the field addresses a real world problem of imaging of shallow explosives.978-1-4899-9530-8978-1-4419-7805-9
信任
发表于 2025-3-25 10:52:31
Shubhendu Bhardwaj,John Volakisof developed algorithms. The developed technique is applied to two types of blind experimental data, which are collected both in a laboratory and in the field. The result for the blind backscattering experimental data collected in the field addresses a real world problem of imaging of shallow explosives.978-1-4899-9530-8978-1-4419-7805-9
arthroscopy
发表于 2025-3-25 13:12:46
Jimy Encomendero,Debdeep Jena,Huili Grace Xingof developed algorithms. The developed technique is applied to two types of blind experimental data, which are collected both in a laboratory and in the field. The result for the blind backscattering experimental data collected in the field addresses a real world problem of imaging of shallow explosives.978-1-4899-9530-8978-1-4419-7805-9
CROAK
发表于 2025-3-25 16:19:23
http://reply.papertrans.cn/43/4267/426605/426605_24.png
Wallow
发表于 2025-3-25 21:12:01
http://reply.papertrans.cn/43/4267/426605/426605_25.png
concert
发表于 2025-3-26 01:41:29
,High Power High Frequency Transistors: A Material’s Perspective,ncy performance of a material system. Care must be taken when predicting performance based only on Johnson’s figure of merit as many parameters not considered by it can significantly impact performance. This chapter takes a closer look at key material parameters that should be considered when predic
Urologist
发表于 2025-3-26 08:18:24
Isotope Engineering of GaN for Boosting Transistor Speeds,ring. In GaN electronic devices, the saturation velocity gets reduced when the carrier concentration is increased which makes difficult to achieve simultaneous high-power and high-frequency operation. In this chapter, we develop a theory of electron transport in the presence of strong electron-phono
Fissure
发表于 2025-3-26 10:33:55
http://reply.papertrans.cn/43/4267/426605/426605_28.png
Champion
发表于 2025-3-26 14:04:40
http://reply.papertrans.cn/43/4267/426605/426605_29.png
Concerto
发表于 2025-3-26 17:59:24
Plasma-Wave Propagation in GaN and Its Applications,tz detectors and sources. Electron plasma waves are generated when electrons in the channel of a transistor are not able to follow high-frequency oscillations and lag behind. This introduces a delay or phase shift manifested as an inductive behavior, the so-called kinetic inductance. This electron i