Philanthropist
发表于 2025-3-21 17:06:10
书目名称HEMT Technology and Applications影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0420185<br><br> <br><br>书目名称HEMT Technology and Applications影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0420185<br><br> <br><br>书目名称HEMT Technology and Applications网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0420185<br><br> <br><br>书目名称HEMT Technology and Applications网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0420185<br><br> <br><br>书目名称HEMT Technology and Applications被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0420185<br><br> <br><br>书目名称HEMT Technology and Applications被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0420185<br><br> <br><br>书目名称HEMT Technology and Applications年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0420185<br><br> <br><br>书目名称HEMT Technology and Applications年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0420185<br><br> <br><br>书目名称HEMT Technology and Applications读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0420185<br><br> <br><br>书目名称HEMT Technology and Applications读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0420185<br><br> <br><br>
后来
发表于 2025-3-21 23:13:41
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Irremediable
发表于 2025-3-22 03:22:32
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Counteract
发表于 2025-3-22 07:02:30
Anadijiban Das,Andrew DeBenedictisible substitute to the GaN channel for the next generation power as well as RF devices and circuits. This chapter describes the polarization details of Al.Ga.N/Al.Ga.N heterostructure, and various device structure of AlGaN channel HEMTs and their static and dynamic characteristics.
CESS
发表于 2025-3-22 11:46:33
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Coterminous
发表于 2025-3-22 14:03:50
The Genesis of Simulation in DynamicsS) into the existing HEMT models and considering thin subcritical barrier thickness can satisfy the modeling challenges of the DC characteristics of this device. Moreover, oxide barrier interface charges also affect the shift in threshold voltage toward the positive .-axis of transfer characteristics up to a larger extent.
sparse
发表于 2025-3-22 19:14:49
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闹剧
发表于 2025-3-22 21:45:39
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追踪
发表于 2025-3-23 01:56:02
Enhancement-Mode MOSHEMT,S) into the existing HEMT models and considering thin subcritical barrier thickness can satisfy the modeling challenges of the DC characteristics of this device. Moreover, oxide barrier interface charges also affect the shift in threshold voltage toward the positive .-axis of transfer characteristics up to a larger extent.
accrete
发表于 2025-3-23 06:00:06
https://doi.org/10.1057/9780230612129derlapped structure. The chapter also delves into the advantages of multigate structures and the use of quaternary indium aluminum gallium nitride (InAlGaN) compound to deliver higher breakdown voltage.