aggression
发表于 2025-3-21 19:33:25
书目名称GaN Technology影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0391005<br><br> <br><br>书目名称GaN Technology影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0391005<br><br> <br><br>书目名称GaN Technology网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0391005<br><br> <br><br>书目名称GaN Technology网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0391005<br><br> <br><br>书目名称GaN Technology被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0391005<br><br> <br><br>书目名称GaN Technology被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0391005<br><br> <br><br>书目名称GaN Technology年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0391005<br><br> <br><br>书目名称GaN Technology年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0391005<br><br> <br><br>书目名称GaN Technology读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0391005<br><br> <br><br>书目名称GaN Technology读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0391005<br><br> <br><br>
decipher
发表于 2025-3-21 23:15:54
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冬眠
发表于 2025-3-22 00:31:58
https://doi.org/10.1007/978-3-476-05473-9igh Electron Mobility Transistors (GaN HEMTs) in power electronics. GaN technology offers unprecedented advantages over traditional silicon-based devices, including higher efficiency, faster switching speeds, and reduced losses. Chowdhury emphasizes GaN’s potential to revolutionize diverse sectors s
gusher
发表于 2025-3-22 07:14:38
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把…比做
发表于 2025-3-22 12:46:09
Zusammenfassung, Fazit und Ausblick,d Ferdinando Iucolano), explores the complexities of Gallium Nitride (GaN) device fabrication. Daryanani delves into epitaxial growth techniques, defect characterization, and the role of ion implantation in optimizing GaN power devices. The subsequent section by STMicroelectronics researchers provid
激怒
发表于 2025-3-22 13:19:32
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激怒
发表于 2025-3-22 19:20:21
https://doi.org/10.1007/978-3-531-93193-7andro Pozo, and colleagues from Efficient Power Conversion highlight GaN’s efficacy in buck and LLC converters. Stephen Colino, John Glaser, and Marco Palma explore GaN’s role in lidar systems and motor drive applications, respectively, emphasizing efficiency gains. Martin Wattenberg from Infineon T
surrogate
发表于 2025-3-22 22:05:39
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声明
发表于 2025-3-23 01:55:40
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拖网
发表于 2025-3-23 07:30:36
https://doi.org/10.1007/978-3-322-91071-4 devices relative to competing technologies like silicon superjunction and silicon carbide (SiC) in the 600 V/650 V class. They explore various GaN-based device concepts, including vertical and lateral designs, and discuss their characteristics and value propositions across different applications. T