Halcyon
发表于 2025-3-21 18:48:45
书目名称Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0389140<br><br> <br><br>书目名称Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0389140<br><br> <br><br>书目名称Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0389140<br><br> <br><br>书目名称Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0389140<br><br> <br><br>书目名称Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0389140<br><br> <br><br>书目名称Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0389140<br><br> <br><br>书目名称Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0389140<br><br> <br><br>书目名称Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0389140<br><br> <br><br>书目名称Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0389140<br><br> <br><br>书目名称Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0389140<br><br> <br><br>
antecedence
发表于 2025-3-21 21:19:59
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BLUSH
发表于 2025-3-22 03:23:21
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LIMN
发表于 2025-3-22 07:36:20
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Infect
发表于 2025-3-22 11:40:31
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Override
发表于 2025-3-22 13:36:58
Politics and the History CurriculumIn this chapter, the scavenging concept is analyzed. As it was commented in the introduction, Kim et al. explored this effect for the first time with the aim of reducing the SiO. layer that growth at the high κ/silicon interface.
Override
发表于 2025-3-22 21:04:55
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IST
发表于 2025-3-22 21:49:30
Introduction,The integrated circuits (ICs) based on complementary metal-oxide-semiconductor (CMOS) devices are currently the dominant technology in the microelectronic industry. Its success is based on the low static power consumption and its high integration density.
gain631
发表于 2025-3-23 02:26:15
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变色龙
发表于 2025-3-23 08:18:58
Characterization Techniques,The study of the semiconductor/high κ interface and the properties of the dielectric film, grown using the fabrication techniques described in the former chapter, are one of the main objectives of this thesis.