向外
发表于 2025-3-25 07:17:57
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责怪
发表于 2025-3-25 07:40:14
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palpitate
发表于 2025-3-25 12:31:48
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护航舰
发表于 2025-3-25 19:16:40
Design and Fabrication of Gallium High-Power Rectifiers,itching speed, which is important for improving the efficiency of inductive motor controllers and power supplies. Both GaN and SiC power Schottky diodes have demonstrated shorter turn-on delays than comparable Si devices. In this chapter we review the design and fabrication of GaN power rectifiers.
革新
发表于 2025-3-25 21:43:06
Nitride-Based Spintronics,erature will be a strong function of bandgap. In this chapter we review the current state of the art in producing room-temperature ferromagnetism in GaN-based materials, the origins of the magnetism and its potential applications.
Console
发表于 2025-3-26 03:42:02
1619-0181 plementary material: .Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magne
藕床生厌倦
发表于 2025-3-26 05:09:45
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Malleable
发表于 2025-3-26 09:29:00
Design and Fabrication of Gallium High-Power Rectifiers, times larger and on-state resistance R. approximately 400 times lower at a given voltage. These characteristics have made GaN devices attractive for hybrid electric vehicles and power conditioning in large industrial motors. In particular, Schottky rectifiers are attractive because of their fast sw
Tracheotomy
发表于 2025-3-26 15:49:39
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漂泊
发表于 2025-3-26 18:35:53
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