papyrus
发表于 2025-3-21 19:14:20
书目名称Gallium Nitride Processing for Electronics, Sensors and Spintronics影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0380404<br><br> <br><br>书目名称Gallium Nitride Processing for Electronics, Sensors and Spintronics影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0380404<br><br> <br><br>书目名称Gallium Nitride Processing for Electronics, Sensors and Spintronics网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0380404<br><br> <br><br>书目名称Gallium Nitride Processing for Electronics, Sensors and Spintronics网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0380404<br><br> <br><br>书目名称Gallium Nitride Processing for Electronics, Sensors and Spintronics被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0380404<br><br> <br><br>书目名称Gallium Nitride Processing for Electronics, Sensors and Spintronics被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0380404<br><br> <br><br>书目名称Gallium Nitride Processing for Electronics, Sensors and Spintronics年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0380404<br><br> <br><br>书目名称Gallium Nitride Processing for Electronics, Sensors and Spintronics年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0380404<br><br> <br><br>书目名称Gallium Nitride Processing for Electronics, Sensors and Spintronics读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0380404<br><br> <br><br>书目名称Gallium Nitride Processing for Electronics, Sensors and Spintronics读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0380404<br><br> <br><br>
伸展
发表于 2025-3-21 22:03:17
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BLUSH
发表于 2025-3-22 00:57:37
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向外
发表于 2025-3-22 05:25:01
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NIB
发表于 2025-3-22 11:44:00
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终点
发表于 2025-3-22 15:26:04
Advanced Processing of Gallium Nitride for Electronic Devices,e high resistivity GaN. Damage-related isolation with sheet resistances of 10. Ω/□ in n-GaN and 10. Ω/□ in p-GaN have been achieved by implanting O and transition metal elements. Effects of surface cleanliness on characteristics of GaN Schottky contacts have been investigated, and the reduction in b
终点
发表于 2025-3-22 19:30:43
Chemical, Gas, Biological, and Pressure Sensing,lock co-polymer solutions. Pt-gated GaN Schottky diodes and Sc.O.-AlGaN-GaN metal-oxide semiconductor diodes also show large change in forward currents upon exposure to H.-containing ambients. Of particular interest are methods for detecting ethylene (C.H.), which offers problems because of its stro
Misnomer
发表于 2025-3-22 23:00:31
Novel Insulators for Gallium Nitride Metal-Oxide Semiconductor Field Effect Transistors and AlGaN-Grrent collapse in GaN-AlGaN HEMTs. Clear evidence of inversion has been demonstrated in gatecontrolled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high-temperature implant activation anneal show a total surface state density of ∼3 × 10. cm.. On HEMT
幼儿
发表于 2025-3-23 02:55:25
1619-0181 ing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors..978-1-84996-965-9978-1-84628-359-8Series ISSN 1619-0181 Series E-ISSN 2365-0761
啜泣
发表于 2025-3-23 06:10:57
https://doi.org/10.1007/1-84628-359-0GaN; Gallium nitride; Materials Processing; Sensors; electronics; power electronics; spintronics